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Perspective Review | Open Access

Selectivity and stability reshaping high-sensitivity detection boundaries: A technical leap and paradigm shift in semiconductor surface-enhanced Raman scattering

Jie Lin3,§ ( ), Xiangyu Meng14,§, Yujiao Xie3,§, Yusi Peng2,§, Xingce Fan6 ( ), Kun Liang3 ( ), Fugang Xu13 ( ), Aiguo Shen12 ( ), Libin Yang11 ( ), Lei Chen10 ( ), Wei Ji9 ( ), Tingting Zheng8 ( ), Teng Qiu6 ( ), Shan Cong5 ( ), Zhigang Zhao5 ( ), Xiaotian Wang4 ( ), Yong Yang2 ( ), Aiguo Wu3 ( ), Guangcheng Xi7 ( ), Bing Zhao1 ( )
State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China
State Key Laboratory of High-Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
Laboratory of Advanced Theranostic Materials and Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
School of Chemistry, Beihang University, Beijing 100191, China
Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, China
Key Laboratory of Consumer Product Quality Safety Inspection and Risk Assessment for State Market Regulation, Chinese Academy of Quality and Inspection & Testing, Beijing 100176, China
Shanghai Key Laboratory of Green Chemistry and Chemical Processes, School of Chemistry and Molecular Engineering, East China Normal University, Shanghai 200241, China
College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China
School of Materials Science and Engineering, Jilin Jianzhu University, Changchun 130118, China
College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, China
School of Bioengineering and Health, Wuhan Textile University, Wuhan 430200, China
College of Chemistry and Materials, Jiangxi Normal University, Nanchang 330022, China
School of Basic Medical Sciences, Hebei University, Baoding 071002, China

§ Jie Lin, Xiangyu Meng, Yujiao Xie, and Yusi Peng contributed equally to this work.

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Abstract

This perspective commemorates 50 years of surface-enhanced Raman scattering (SERS) by highlighting the paradigm shift toward rationally designed semiconductor substrates, enabling ultrasensitive and molecule-selective detection. Several enhancement strategies have been developed to effectively modulate the electronic band structure and charge transfer (CT) processes, such as energy level customization, amorphization, quasi-metallization, and morphology control, achieving high enhancement factors with good selectivity and stability. Moreover, semiconductor SERS substrates show broad prospects in the fields of bio-sensing and cancer diagnosis. Nevertheless, standardization gaps in substrate reproducibility and data comparability hinder its widespread adoption. Resolving these challenges through multi-stakeholder collaboration is essential to bridge the technology transfer gap and establish SERS as a core platform for next-generation inspection.

Graphical Abstract

Several enhancement strategies, such as energy level modulation, amorphization, quasi-metallization, and morphology control, have been developed to improve the enhancement factor, selectivity, and stability of semiconductor surface-enhanced Raman scattering (SERS) substrates. These advances have broadened their application prospects in areas including virus detection, food safety monitoring, gas sensing, and cancer diagnosis.

Keywords

surface-enhanced Raman scatteringsemiconductorenhancement strategiesbio-sensingcancer diagnosis

References

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Nano Research
Volume 19 Issue 3,
March 2026
Article number: 94908347
DOI: 10.26599/NR.2026.94908347

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Cite this article:
Lin J, Meng X, Xie Y, et al. Selectivity and stability reshaping high-sensitivity detection boundaries: A technical leap and paradigm shift in semiconductor surface-enhanced Raman scattering. Nano Research, 2026, 19(3): 94908347. https://doi.org/10.26599/NR.2026.94908347
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Received: 15 November 2025
Revised: 12 December 2025
Accepted: 14 December 2025
Published: 11 March 2026
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).