Performance optimization strategies for black phosphorus infrared photodetectors: A review

Infrared photodetectors play an essential role in diverse military and civilian applications. Nevertheless, traditional infrared detection materials often suffer from inherent limitations, such as fixed bandgaps and stringent low-temperature operational requirements. The emergence of two-dimensional (2D) materials has revolutionized infrared detection technology, enabling the development of efficient room-temperature photodetectors. Among various 2D materials, black phosphorus (BP) has attracted considerable attention due to its narrow direct bandgap, tunable electronic properties, and exceptional hole mobility. These unique attributes endow BP-based infrared photodetectors with superior performance, including ultrafast response times, broad detection spectral ranges, and remarkably low dark currents. This review systematically summarizes recent advancements in material synthesis techniques, underlying device principles, and performance optimization strategies of BP infrared photodetectors. Additionally, it critically addresses ongoing challenges and offers a comprehensive perspective, laying a solid theoretical foundation and practical roadmap for advancing next-generation high-performance infrared photodetection technologies.