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Two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness, tunable band gap, and strong light-matter interaction. However, their practical application is still limited by challenges such as the constraints of high-temperature synthesis processes, compatibility issues of p-type/n-type doping strategies, and insufficient nanoscale patterning accuracy. Plasma treatment has become a key technology to break through these bottlenecks with its unique advantages such as low-temperature operation capability, generation of highly active reactive species and precise controllability of multiple parameters. This review comprehensively reviews the latest progress in plasma engineering of TMDs (MoS2, WS2, WSe2, etc.) based on a systematic “fundamental process–property modulation–device innovation” framework. The key plasma technologies are highlighted: plasma-enhanced chemical vapor deposition (PECVD) for low-temperature growth, bidirectional doping achieved through active species regulation, atomic layer precision etching, and defect engineering. The regulation mechanism of plasma on the intrinsic properties of materials is systematically analyzed, including electronic structure modification, optical property optimization (such as photoluminescence enhancement) and structural feature evolution. It then reveals how plasma technology promotes device innovation: achieving customizable structures (p-n junctions, sub-10 nanometer channels), optimizing interface properties (reducing contact resistance, integrating high-k dielectrics), and significantly improving the performance of gas sensors, photodetectors and neuromorphic computing systems. Finally, this article looks forward to future research directions, emphasizing that plasma technology is a versatile and indispensable platform for promoting TMDs towards practical applications.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).
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