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Review Article | Open Access

Plasma engineering of two-dimensional transition metal dichalcogenides: From material synthesis to functional device integration

Yuan Xie1,2Ai Zhang1Guangjun Wang1Shida Huo2Pingjuan Niu1( )Enxiu Wu2( )
School of Electronics and Information Engineering, Tiangong University, Tianjin 300387, China
State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
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Abstract

Two-dimensional transition metal dichalcogenides (TMDs) have shown great potential for application in the next generation of electronics and optoelectronics due to their atomically thin thickness, tunable band gap, and strong light-matter interaction. However, their practical application is still limited by challenges such as the constraints of high-temperature synthesis processes, compatibility issues of p-type/n-type doping strategies, and insufficient nanoscale patterning accuracy. Plasma treatment has become a key technology to break through these bottlenecks with its unique advantages such as low-temperature operation capability, generation of highly active reactive species and precise controllability of multiple parameters. This review comprehensively reviews the latest progress in plasma engineering of TMDs (MoS2, WS2, WSe2, etc.) based on a systematic “fundamental process–property modulation–device innovation” framework. The key plasma technologies are highlighted: plasma-enhanced chemical vapor deposition (PECVD) for low-temperature growth, bidirectional doping achieved through active species regulation, atomic layer precision etching, and defect engineering. The regulation mechanism of plasma on the intrinsic properties of materials is systematically analyzed, including electronic structure modification, optical property optimization (such as photoluminescence enhancement) and structural feature evolution. It then reveals how plasma technology promotes device innovation: achieving customizable structures (p-n junctions, sub-10 nanometer channels), optimizing interface properties (reducing contact resistance, integrating high-k dielectrics), and significantly improving the performance of gas sensors, photodetectors and neuromorphic computing systems. Finally, this article looks forward to future research directions, emphasizing that plasma technology is a versatile and indispensable platform for promoting TMDs towards practical applications.

Graphical Abstract

This review summarizes recent advances in plasma engineering of two-dimensional transition metal dichalcogenides (TMDs), spanning from low-temperature synthesis and doping strategies to atomic-scale patterning and defect modulation. Emphasizing a “Fundamental Processes–Property Modulation–Device Innovation” framework, it highlights how plasma technologies enable scalable manufacturing and performance enhancement of TMD-based electronic and optoelectronic devices.

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Nano Research
Article number: 94907853

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Cite this article:
Xie Y, Zhang A, Wang G, et al. Plasma engineering of two-dimensional transition metal dichalcogenides: From material synthesis to functional device integration. Nano Research, 2025, 18(11): 94907853. https://doi.org/10.26599/NR.2025.94907853
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Received: 19 June 2025
Revised: 25 July 2025
Accepted: 28 July 2025
Published: 29 September 2025
© The Author(s) 2025. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).