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Research Article | Open Access | Just Accepted

Junction field-effect transistors based on ZnO/Te heterostructure for UV photodetector and logic inverter with ultralow power consumption

Xiaohui Song1Haijuan Yang1Zinan Ma1Zhen Liu1Ruohao Hong2Xueping Li3Suicai Zhang1Leiming Yu1Yurong Jiang1Xu Zhao1Congxin Xia1( )

1 Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, School of Physics, Henan Normal University, Xinxiang 453007, China

2 Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou 450000, China

3 Department of Electronic and Electrical Engineering, Henan Normal University, Xinxiang 453007, China

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Abstract

Achieving minimal subthreshold swing (SS) in transistors is crucial for low-voltage operation and reduced power consumption, however, it remains a challenging issue for conventional metal-oxide-semiconductor field-effect transistors due to the complex dielectric engineering. Here, a gate-dielectric free junction field-effect transistor (JFET) is designed based on Te/ZnO van der Waals heterojunction, which exhibits remarkable p-n diode characteristics with a rectifying ratio exceeding 106. By using Te as the gate and ZnO as the channel, the Te/ZnO device demonstrates excellent JFET properties including an on/off ratio of 106, gate leakage current as low as 800 fA, a small pinch-off voltage VP of -0.31 V, and a minimum sub-threshold swing (SS) of 65 mV dec-1, nearly approaching the theoretical limit of 60 mV dec-1. Under 375-nm laser illumination, the Te/ZnO JFET achieves a high responsivity of 160 A W-1 and detectivity of 9×1011 Jones. Furthermore, a logic inverter is successfully demonstrated with a high gain of 35 and an ultralow power consumption of 6.5 nW. This finding offers a promising pathway to low-power and high-performance electronic applications.

Nano Research
Cite this article:
Song X, Yang H, Ma Z, et al. Junction field-effect transistors based on ZnO/Te heterostructure for UV photodetector and logic inverter with ultralow power consumption. Nano Research, 2025, https://doi.org/10.26599/NR.2025.94907732

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Received: 20 March 2025
Revised: 01 June 2025
Accepted: 25 June 2025
Available online: 25 June 2025

© The Author(s) 2025. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/)

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