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Heterojunction structures are favored for constructing photoelectrochemical ultraviolet photodetectors (PEC UV PDs), whereas lattice mismatches impede their optoelectronic performance. This work presents a novel homojunction consisting of two-dimensional (2D) In2O3 nanosheets (NS) and three-dimensional (3D) In2O3 microcubes (MC) with a suitable energy band alignment. 2D In2O3 NS not only shows an enlarged bandgap due to the quantum confinement effect but also effectively upshifts the conductive band and Fermi level stemming from the oxygen vacancy demonstrated by the theoretical simulation and experimental results. The photogenerated carrier dynamic of In2O3 photoanodes is boosted by the 2D-3D homojunction with a built-in electric field and more electrochemically active sites, leading to higher photogenerated carrier separation efficiency, faster interfacial charge transfer, and better self-powered capability. The In2O3 2D-3D homojunction PEC UV PDs exhibit outstanding self-powered deep-UV photoresponse at 0 V, with an ultrahigh responsivity of 316.5 mA/W for 254 nm light, a fast response speed of 15/15 ms, high detectivity of 1.12 × 1012 Jones, and an outstanding UV-vis rejection ratio of 1507, surpassing most recorded PEC UV PDs. This work demonstrates the pivotal role of morphology-controlled homojunction in modulating photogenerated carrier dynamics and offers a new strategy for designing high-performance PEC devices.
© The Author(s) 2025. Published by Tsinghua University Press.
This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/)