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The direct growth of graphene via chemical vapour deposition on dielectric materials is a promising approach for transfer-free applications. However, large-scale production using this technique is hindered by the slow growth on non-catalytic substrates. In this study, the growth mechanism of graphene on glass fibre is theoretically explored, assuming α-SiO2(001) as the model substrate. C2/C2H (from ethylene and acetylene) and C3/C3H (from propane) are identified as the active species driving the growth process. C2H and C3 are also key for nucleation because of their excellent migration capabilities. In hydrogen-passivated surface models, C2H demonstrates a lower energy barrier for growth. Experimental results further indicate that acetylene, ethylene, and propane are promising carbon sources for graphene synthesis. These results are valuable for understanding the synthesis of graphene-skinned glass fibre fabrics, with the potential to improve graphene production on insulating substrates.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).
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