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The development of large-area high-performance flexible photoelectronic synaptic devices has become a hot topic in the field of neuromorphic computing and artificial vision systems. In this work, we have successfully prepared a large-area, ultra-flexible semiconducting single-walled carbon nanotubes (sc-SWCNTs) photoelectronic synaptic thin-film transistors (TFTs) array (33 × 34) using solution-processable AlOx thin film as the dielectrics by roll-to-roll gravure printing. Our photoelectronic synaptic TFTs exhibit excellent electrical properties with high switching ratio (≥ 105), low subthreshold swing (73 mV·dec−1), excellent photoresponse properties over a wide wavelength range (from 270 to 650 nm), sustained photoconductivity effect (only 26.7% drop after removing light source for 36,000 s) and remarkable mechanical reliability and flexibility (maintaining excellent electrical properties after bending more than 15,000 cycles with a bending radius of 5 mm). In addition, concepts such as multimodal optoelectronic synaptic plasticity, optical writing speed perception simulation, and human eye self-recovery model have been successfully demonstrated using printed flexible sc-SWCNTs photoelectronic neuromorphic TFTs arrays. More importantly, we systematically investigated the response characteristics of these devices under deep ultraviolet light stimulation and, for the first time, successfully simulated bio-inspired visual perception self-recovery including the dynamic transition of the visual system from clarity to blurriness and their self-recovery over time. This work indicates that our photoelectronic neuromorphic TFT devices have great practical potential in human–computer interaction, environment perception, and visual simulation.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).
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