Performance modification of two-dimensional organic field-effect transistors

Organic transistors, as a new generation of electronic technology, play a crucial role in the development of low-cost and flexible electronic applications, garnering extensive research interest. Two-dimensional organic semiconductors (2D-OSCs) with molecular layer thickness have shown important value in exploring the charge transfer mechanism of molecules, building high-performance transistor devices and large-scale flexible integrated circuits due to their advantages, such as long-range order of molecular arrangement, no grain boundaries, few impurities and defects, and high charge transfer efficiency. Currently, researchers are actively engaged in enhancing the performance of 2D organic field-effect transistors (2D-OFETs), which includes the design of high-performance molecular structures, controlled growth of large-area, high-quality crystals, and fabrication process. Therefore, this article focuses on the comprehensive performance optimization of 2D-OFETs, reviewing the relationship between key performance parameters and device structure, the latest research progress, and the main challenges currently faced. Furthermore, we delve into and summarize the optimization mechanisms and corresponding strategies for 2D-OFET mobility, dielectric layer performance, power consumption, and contact resistance. Lastly, we provide an outlook on the manufacturing technology of 2D-OFETs and their application prospects, aiming to guide future research and development. Ongoing research and development efforts in this area have the potential to make significant advances.