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Research Article | Open Access

Two-dimensional lateral magnetic tunnel junction with ultrahigh tunneling magnetoresistance

Qiu-Qiu Li1Zhi-Fu Duan1Wen-Wen Liu2Rong Yang1 ( )Bo Li1,3,4 ( )Ke-Qiu Chen2 ( )
Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
Research Institute of Hunan University in Chongqing, Chongqing 401120, China
Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
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Abstract

Giant tunneling magnetoresistance (TMR) has always been a pursuit in the research of magnetic tunnel junctions (MTJ). Two-dimensional (2D) magnetic materials have been used to construct lateral MTJ with high TMR. Here we investigated the crystal structure and magnetic property of CrSI monolayer, and found that it is a ferromagnetic semiconductor with a Curie temperature of about 180 K. The CrSI monolayer with Li adsorption (Li-CrSI) show ferromagnetic half-metallic with a high Curie temperature of 300 K. Further we designed a lateral Li-CrSI/CrSI/Li-CrSI monolayer MTJ. The TMR of the MTJs along b transport direction is 3 orders of magnitude times larger than that of the a transport direction, which should result from the different spin filtering ability along the two directions. The TMR of b transport direction in the MTJ is 7.67 × 1014, which is significantly higher than that of any reported lateral MTJs based on 2D materials. Our results provide a promising avenue for designing lateral MTJs with giant TMR and high Curie temperature.

Graphical Abstract

We have constructed a Li-CrSI/CrSI/Li-CrSI monolayer lateral magnetic tunnel junction (MTJ) and found the tunneling magnetoresistance (TMR) of the MTJ is 7.67 × 1014, which is significantly higher than that of any reported lateral MTJs based on two-dimensional (2D) materials.

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Nano Research
Article number: 94907188

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Cite this article:
Li Q-Q, Duan Z-F, Liu W-W, et al. Two-dimensional lateral magnetic tunnel junction with ultrahigh tunneling magnetoresistance. Nano Research, 2025, 18(2): 94907188. https://doi.org/10.26599/NR.2025.94907188
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Received: 25 November 2024
Revised: 08 December 2024
Accepted: 12 December 2024
Published: 14 January 2025
© The Author(s) 2025. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).