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Research Article | Open Access

Growth modes of β-Ga2O3 on h-BN: Remote epitaxy and van der Waals epitaxy

Yiming Shi1,2, Junhua Meng1 ( ), Zhengchang Xia2,3, Jidong Huang2,3, Wenkang Liu1, Ji Jiang2,3, Zhigang Yin2,3, Jinxiang Deng1, Xingwang Zhang2,3 ( )
School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Graphical Abstract

The monoclinic gallium oxide (β-Ga2O3) films are deposited on both polycrystalline and single-crystalline hexagonal boron nitride (h-BN) layers with different thicknesses to investigate two-dimensional (2D)-material-assisted growth modes of β-Ga2O3 on h-BN. The potential of the sapphire substrate can penetrate the monolayer and bilayer h-BN to obtain the remote epitaxy of β-Ga2O3, regardless of the crystallinity of h-BN. Compared with the conventional and remote epitaxial β-Ga2O3 on sapphire, the van der Waals (vdW) epitaxial β-Ga2O3 on the single-crystalline h-BN exhibits higher crystallinity.

Abstract

Integrating monoclinic gallium oxide (β-Ga2O3) with two-dimensional (2D) hexagonal boron nitride (h-BN) into heterostructures is of significant importance for achieving high-power device applications. The 2D-material-assisted epitaxy provides a straightforward integration method for fabricating β-Ga2O3/h-BN vertical heterostructures. In this work, the β-Ga2O3 films were deposited on both polycrystalline and single-crystalline h-BN layers with different thicknesses, and two growth modes of β-Ga2O3 films on h-BN, remote epitaxy, and van der Waals (vdW) epitaxy, were investigated. The results show that the potential of the sapphire substrate can penetrate the monolayer and bilayer h-BN to obtain the remote epitaxy of β-Ga2O3 films, regardless of the crystallinity of h-BN. The vdW epitaxy of β-Ga2O3 film can be realized on the monocrystalline h-BN substrate. Compared with the conventional and remote epitaxial β-Ga2O3 films on sapphire substrate, the vdW epitaxial β-Ga2O3 films on the single-crystalline h-BN substrate exhibit higher crystallinity. This work indicates that the 2D-material-assisted epitaxy provides a feasible scheme for the heterogeneous integration of β-Ga2O3 films.

Keywords

β-Ga2O3h-BNremote epitaxyvan der Waals epitaxyheterostructures

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Nano Research
Volume 18 Issue 2,
February 2025
Article number: 94907129
DOI: 10.26599/NR.2025.94907129
Cite this article:
Shi Y, Meng J, Xia Z, et al. Growth modes of β-Ga2O3 on h-BN: Remote epitaxy and van der Waals epitaxy. Nano Research, 2025, 18(2): 94907129. https://doi.org/10.26599/NR.2025.94907129
Topics:
Epitaxial growthLayered semiconductorsWide band gap semiconductors

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Received: 01 September 2024
Revised: 03 October 2024
Accepted: 13 November 2024
Published: 02 January 2025
© The Author(s) 2025. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).
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