Strain-controlled current-induced magnetization switching in flexible spin-orbit torque device

Spin-orbit torque (SOT)-based flexible devices have been proved to be promising candidates for wearable technology and artificial intelligence. However, there is still a blank for the bending sensitive SOT devices, which hampers the applications of flexible spintronic devices. Here we report a bending strain-mediated perpendicular magnetic anisotropy (PMA) and current-induced magnetization switching in Kapton/polyimide/Ta/Pt/Co/Pt ferromagnetic heterostructures. The coercivity of anomalous Hall effect loop increases about 15% under a tensile strain of about 1.35%. Moreover, the critical current density (J_c) gradually decreases with increasing of the tensile strain, and the magnitude of J_c reduces about 7.6% under 1.35% tensile strain. It is notable that the Hall resistance can be reversible modulated by tensile strain. These strain sensitive behaviors can be attributed to the mechanical strain from the flexible substrates. This study paves the way for future train sensors and low energy consumption logic-in memory basing on mechanical strain.