Abstract
Aurivillius-phase layered material SrBi2Ta2O9 possesses extremely low leakage current (~10-9 A×cm-2) along the out-of-plane direction with in-plane ferroelectricity, which brings in difficulties in achieving high ferroelectric performance and low leakage current simultaneously in the randomly oriented ceramic. Here, highly textured SrBi2Ta2O9 ceramics with texture degree of f = 0.985 are prepared using templated grain growth (TGG) technology with tape-casting method. The in-plane remnant polarization achieves 15.83 μC×cm-2, which is increased by 197% compared with that of SrBi2Ta2O9 randomly oriented ceramic. Doping Ca elements is found to reduce in-plane leakage current density to J = 5.924 × 10-7 A×cm-2, which is attributed to the increased electronic band gap. This research presents an effective route for developing high-performance SrBi2Ta2O9-based ferroelectric device.

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