Rational high-entropy doping strategy via modular in situ/post solvothermal doping integration for microwave absorption

Doping strategies have been widely demonstrated as effective approaches to tailor microwave absorption properties in various material systems. However, achieving high-entropy doping (HED) in MoS₂ while minimizing phase ratio interference, effectively integrating multiple transition metal element substitutions, and elucidating the underlying absorption mechanisms remain significant challenges. In this work, we develop a modular in situ/post solvothermal doping process to realize the cooperative incorporation of multiple dopants into a metallic-phase MoS₂ (1T-MoS₂) host. For the first time, we systematically investigate the effects of multiple-element codoping, including high-density lattice strain, crystalline defects, localized charge accumulation, and redistribution, which significantly increase dipole polarization loss. Owing to the balanced impedance characteristics and coordinated polarization/conductive losses enabled by HED engineering, the WVNbTaRu-MoS₂ sample achieves a broadband effective absorption bandwidth of 7.65 GHz, which is more than double that of its undoped counterparts. Through combinatorial screening, we proposed 31 feasible doping configurations and experimentally validated 9 variants, establishing a foundational framework for designing advanced MoS₂-based absorbers with tailored electromagnetic properties. This study provides innovative insights and pathways for the rational design of high-performance transition metal dichalcogenide-based microwave absorbers.