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Research Article | Open Access

Achieving ultra-low thermal expansion and excellent microwave dielectric properties in osumilite-type BaMg2Al6Si9−xGexO30 ceramics

Chengyun Li1Kang Du1,2( )Mengdie Zhou1Yunkang Ge1Yuan Wang1Guochao Wei1,2Weijia Han1,2Wei Zhu1,2Xinying Liu3Zixiong Sun3Wen Lei4,5( )Shengxiang Wang1,2 ( )
School of Microelectronics, Wuhan Textile University, Wuhan 430200, China
Hubei Provincial Engineering Research Center for Wide-Bandgap Semiconductor Materials and Devices, Wuhan Textile University, Wuhan 430200, China
School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710021, China
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, China
Wenzhou Advanced Manufacturing Institute, Zhejiang Key Lab of Electronic Functional Ceramics and Devices, Huazhong University of Science and Technology, Wenzhou 325035, China
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Abstract

Excellent microwave dielectric properties and ultra-low thermal expansion are essential for dielectric ceramics in high-frequency substrate applications. However, the inherent constraints among these three key microwave dielectric properties make it challenging to achieve ultra-low relative permittivity (εr), high quality factor (Q×f), and near-zero temperature coefficient of the resonance frequency (τf) values simultaneously in existing materials. In particular, the coefficient of thermal expansion (CTE) of microwave dielectric ceramics often reaches approximately 10 ppm/°C, indicating limited tunability. In this work, based on novel osumilite-type BaMg2Al6Si9O30 ceramics with high crystal structural symmetry and excellent stability, we designed a strategy involving the substitution of Si4+ with larger Ge4+ ions. Replacing Si4+ with larger Ge4+ ions directly elongated the Si/Al(1)–O bond length while reducing the Si/Al(1)–O(1)–Si/Al(1) angle (σ2). This structural modification suppressed the longitudinal vibration of 2-coordinate O(1) along the a-axis, effectively inhibiting negative thermal expansion and yielding a reduced CTE within the operational temperature range. Simultaneously, the elongation of the Si/Al(1)–O bond cooperatively increased the Si/Al(1)–O(2)–Si/Al(1) angle (σ1) and enhanced the relative covalency of the Si/Al(1)–O bond, synergistically improving the Q×f values. Importantly, Ge4+ substitution preserved ultra-low εr and near-zero τf values by maintaining the polarization characteristics and crystal structural stability of BaMg2Al6Si9O30-based ceramics. The optimized BaMg2Al6Si7.75Ge1.25O30 ceramics achieved excellent microwave dielectric properties: εr = 5.84, Q×f = 32,351 GHz, τf = −7.27 ppm/°C, and an ultra-low CTE of +1.07 ppm/°C. The successful co-regulation of the Q×f and CTE values was attributed to the polyhedral coupling strategy, which leveraged the structural features of the osumilite-type ceramics to synergistically optimize the tilting and distortion of critical polyhedra.

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Journal of Advanced Ceramics
Article number: 9221146

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Cite this article:
Li C, Du K, Zhou M, et al. Achieving ultra-low thermal expansion and excellent microwave dielectric properties in osumilite-type BaMg2Al6Si9−xGexO30 ceramics. Journal of Advanced Ceramics, 2025, 14(9): 9221146. https://doi.org/10.26599/JAC.2025.9221146

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Received: 15 May 2025
Revised: 09 July 2025
Accepted: 01 August 2025
Published: 29 September 2025
© The Author(s) 2025.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, http://creativecommons.org/licenses/by/4.0/).