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Research Article | Open Access

Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance

Yu-Bin Shin1,2Su Been Ham1,2Ha-Neul Kim1Mi-Ju Kim1Jae-Woong Ko1Jae-Wook Lee1Young-Jo Park1Jung-Hyung Kim3Hyo-Chang Lee4,5Young Hwa Jung6Jung Woo Lee2( )Ho Jin Ma1( )
Nano Materials Research Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea
Department of Materials Science and Engineering, Pusan National University, Pusan 46241, Republic of Korea
Semiconductor Integrated Metrology Team, Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea
Department of semiconductor Science, Engineering and Technology, Korea Aerospace University, Goyang 10540, Republic of Korea
School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea
PLS-II Beamline Division, Pohang Accelerator Laboratory, Pohang 37673, Republic of Korea
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Abstract

High-entropy ceramics exhibit novel intrinsic properties. Hence, they have been explored for a wide range of applications ranging from thermal insulation and energy storage to advanced optical components. Recently, the semiconductor industry has faced a demand for higher-performance chips, necessitating higher aspect ratios in wafer fabrication and further miniaturization of linewidths. Therefore, novel materials with high plasma etching resistance and minimal contaminant generation are needed. The plasma-etching resistance displayed by high-entropy ceramics can be an innovative solution to this emerging challenge. In this study, we successfully fabricated single-phase high-entropy sesquioxide ceramics with high optical transparency, dense microstructure, and minimal residual pores. A structural analysis of the fabricated samples revealed a single-phase structure with excellent phase homogeneity. An evaluation of the plasma-etching resistance of high-entropy ceramics revealed for the first time a low etching rate of 8 nm/h compared with that of conventional plasma-resistant materials. These comprehensive characterizations of high-entropy ceramics indicate that they are promising candidates for significantly improving the production yield of semiconductors and for a wide range of potential applications, such as next-generation active optical ceramics.

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Journal of Advanced Ceramics
Article number: 9221013
Cite this article:
Shin Y-B, Ham SB, Kim H-N, et al. Novel transparent high-entropy sesquioxide ceramics with high physicochemical plasma etching resistance. Journal of Advanced Ceramics, 2025, 14(1): 9221013. https://doi.org/10.26599/JAC.2024.9221013

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Received: 26 September 2024
Revised: 15 November 2024
Accepted: 01 December 2024
Published: 13 January 2025
© The Author(s) 2025.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, http://creativecommons.org/licenses/by/4.0/).

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