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Research Article | Open Access

Simultaneous enhancement of piezoelectricity and temperature stability in Pb(Ni1/3Nb2/3)O3–PbZrO3–PbTiO3 piezoelectric ceramics via Sm-modification

Kai Li1,Shan Cong1,Lang Bian2( )Zhenting Zhao1Jie Wu3Junfeng Zhao1Duoduo Zhang1Haijuan Mei1Enwei Sun2Xudong Qi4( )Weiping Gong1 ( )Bin Yang2
Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516001, China
Condensed Matter Science and Technology Institute, School of Instrumentation Science and Engineering, Harbin Institute of Technology, Harbin 150080, China
Electronic Materials Research Laboratory (Key Lab of Education Ministry), State Key Laboratory for Mechanical Behavior of Materials and School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
School of Physics and Electronic Engineering, Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin 150025, China

Kai Li and Shan Cong contributed equally to this work.

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Abstract

The development of piezoelectric ceramics characterized by both large piezoelectric response and high-temperature stability is imperative for the advancement of practical electromechanical devices. However, existing high-performance piezoelectric ceramics often encounter compromised temperature stability because ferroelectric phase transitions occur within low-temperature regions. In this work, we focused on Sm-doped Pb(Ni1/3Nb2/3)O3–PbZrO3–PbTiO3 (PNN–PZT:Sm) ceramics with a tetragonal (T)-phase structure to achieve the desired combination of high piezoelectricity and high temperature stability. The results indicate that 2 mol% Sm-doped samples exhibit a large piezoelectric constant (d33) of 575 pC/N, an effective piezoelectric strain coefficient (d33*) of 890 pm/V, and a high ferroelectric-to-paraelectric phase transition temperature (Tm) of 279 °C. Remarkably, d33 experiences only a 2.6% variation over the temperature range of 30–250 °C, while d33* changes by 8% within the temperature range of 30–180 °C. Microstructural and domain structure analyses suggest that Sm-doping effectively reduces the grain size, leading to a decreased domain size, thereby achieving excellent electromechanical properties. The superior temperature stability is attributed to the suppressive effect of Sm-doping on the R–T ferroelectric phase transition. These studies suggest that Sm-doping represents an effective strategy for achieving the collaborative optimization of piezoelectricity and temperature stability through grain and domain engineering techniques for perovskite ferroelectric materials.

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Journal of Advanced Ceramics
Pages 1578-1589

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Cite this article:
Li K, Cong S, Bian L, et al. Simultaneous enhancement of piezoelectricity and temperature stability in Pb(Ni1/3Nb2/3)O3–PbZrO3–PbTiO3 piezoelectric ceramics via Sm-modification. Journal of Advanced Ceramics, 2024, 13(10): 1578-1589. https://doi.org/10.26599/JAC.2024.9220958

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Received: 15 May 2024
Revised: 11 August 2024
Accepted: 12 August 2024
Published: 01 November 2024
© The Author(s) 2024.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, http://creativecommons.org/licenses/by/4.0/).