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Electro-optic modulators, which convert electrical signals onto the transmission light, are key devices in electro-optic modulating systems. Modulation efficiency is one of the most important parameters of an electro-optic modulator, which directly determines the footprint and power consumption of the device. Generally, modulation efficiency strongly depends on the electro-optic response of the crystal. The Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) single crystal with giant electro-optic coefficient ( γc) and high transparency indicates the potential to achieve greatly enhanced modulation efficiency. In this study, a prototype PIN–PMN–PT phase modulator was fabricated based on a titanium (Ti) in-diffusion waveguide, which is reported for the first time. The influences of titanium in-diffusion on the composition and domain structure of the PIN–PMN–PT single crystal were studied by transmission electron microscopy (TEM) and piezoelectric force microscopy (PFM), respectively. Finally, a half-wave voltage (Vπ) of 2.3 V was obtained using a device with 6-mm-long (L) electrodes. Furthermore, the electro-optic modulation efficiency (VπL) was calculated as 1.38 V·cm, which was approximately one order of magnitude lower than that of commercial lithium niobate (LiNbO3, LN) phase modulators. Such enhanced modulation efficiency indicates more compact device and lower power consumption, which is of great significance for electro-optic modulation systems used in micro-fiber gyroscope, integrated photonic devices, etc.


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Greatly enhanced electro-optic modulation efficiency in titanium in-diffusion PIN–PMN–PT waveguide

Show Author's information Qingyuan HuYuebin ZhangHuimin LiaoXin LiuPengfei LiYali FengLei AnYongyong ZhuangZhuo Xu( )Xiaoyong Wei( )
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Abstract

Electro-optic modulators, which convert electrical signals onto the transmission light, are key devices in electro-optic modulating systems. Modulation efficiency is one of the most important parameters of an electro-optic modulator, which directly determines the footprint and power consumption of the device. Generally, modulation efficiency strongly depends on the electro-optic response of the crystal. The Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) single crystal with giant electro-optic coefficient ( γc) and high transparency indicates the potential to achieve greatly enhanced modulation efficiency. In this study, a prototype PIN–PMN–PT phase modulator was fabricated based on a titanium (Ti) in-diffusion waveguide, which is reported for the first time. The influences of titanium in-diffusion on the composition and domain structure of the PIN–PMN–PT single crystal were studied by transmission electron microscopy (TEM) and piezoelectric force microscopy (PFM), respectively. Finally, a half-wave voltage (Vπ) of 2.3 V was obtained using a device with 6-mm-long (L) electrodes. Furthermore, the electro-optic modulation efficiency (VπL) was calculated as 1.38 V·cm, which was approximately one order of magnitude lower than that of commercial lithium niobate (LiNbO3, LN) phase modulators. Such enhanced modulation efficiency indicates more compact device and lower power consumption, which is of great significance for electro-optic modulation systems used in micro-fiber gyroscope, integrated photonic devices, etc.

Keywords: waveguide, Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) single crystal, titanium (Ti) in-diffusion, electro-optic modulator

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Publication history

Received: 26 May 2023
Revised: 29 May 2023
Accepted: 30 May 2023
Published: 21 June 2023
Issue date: July 2023

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© The Author(s) 2023.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 52102143, 51772239, 62001369, 62075088, and 51761145024), Shaanxi Province Project (Grant Nos. 2017ktpt-21 and 2018TD-024), and Jiangxi Technological Innovation Guidance Science and Technology Plan (Grant No. S20212BDH80017).

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