Influence of high-temperature oxidation of SiC powders on curing properties of SiC slurry for digital light processing

Fabrication of silicon carbide (SiC) ceramics by digital light processing (DLP) technology is difficult owing to high refractive index and high ultraviolet (UV) absorptivity of SiC powders. The surface of the SiC powders can be coated with silicon oxide (SiO₂) with low refractive index and low UV absorptivity via high-temperature oxidation, reducing the loss of UV energy in the DLP process and realizing the DLP preparation of the SiC ceramics. However, it is necessary to explore a high-temperature modification process to obtain a better modification effect of the SiC powders. Therefore, the high-temperature modification behavior of the SiC powders is thoroughly investigated in this paper. The results show that nano-scale oxide film is formed on the surface of the SiC powders by short-time high-temperature oxidation, effectively reducing the UV absorptivity and the surface refractive index (nʹ) of the SiC powders. When the oxidation temperature is 1300 ℃, compared with that of unoxidized SiC powders, the UV absorptivity of oxidized SiC powders decreases from 0.5065 to 0.4654, and a curing depth of SiC slurry increases from 22±4 to 59±4 μm. Finally, SiC green bodies are successfully prepared by the DLP with the the oxidized powders, and flexural strength of SiC sintered parts reaches 47.9±2.3 MPa after 3 h of atmospheric sintering at 2000 ℃ without any sintering aid.