Fast grain growth phenomenon in high-entropy ceramics: A case study in rare-earth hexaaluminates

It is generally reported that the grain growth in high-entropy ceramics at high temperatures is relatively slower than that in the corresponding single-component ceramics owing to the so-called sluggish diffusion effect. In this study, we report a fast grain growth phenomenon in the high-entropy ceramics (La_0.2Nd_0.2Sm_0.2Eu_0.2Gd_0.2)MgAl₁₁O₁₉ (HEMA) prepared by a conventional solid-state reaction method. The results demonstrate that the grain sizes of the as-sintered HEMA ceramics are larger than those of the corresponding five single-component ceramics prepared by the same pressureless sintering process, and the grain growth rate of HEMA ceramics is obviously higher than those of the five single-component ceramics during the subsequent heat treatment. Such fast grain growth phenomenon indicates that the sluggish diffusion effect cannot dominate the grain growth behavior of the current high-entropy ceramics. The X-ray photoelectron spectroscopy (XPS) analysis reveals that there are more oxygen vacancies (O_V) in the high-entropy ceramics than those in the single-component ceramics owing to the variable valance states of Eu ion. The high-temperature electrical conductivities of the HEMA ceramics support this analysis. It is considered that the high concentration of O_V and its high mobility in HEMA ceramics contribute to the accelerated migration and diffusion of cations and consequently increase the grain growth rate. Based on this study, it is believed that multiple intrinsic factors for the high-entropy ceramic system will simultaneously determine the grain growth behavior at high temperatures.