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30 September 2023
A gate driver for parallel connected MOSFETs with crosstalk suppression
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New semiconductor materials offer several advantages for modern power systems, including low switching and conduction losses, excellent thermal conduction of a die, and high operation temperature. Avionics is one of the main beneficiaries of the progress in power devices, as it enables more compact and lighter converters for future More Electrical Aircraft. However, these advancements also come with new challenges that must be addressed to avoid potentially dangerous situations and fully utilize the capabilities of fast SiC MOSFETs. One such challenge is the high drain voltage rate during the switching process, which leads to a significant injection of current into the gate circuit (crosstalk effect). This increased current injection increases the risk of shoot-through conduction and thermal runaway. Although preventive measures are well-known, they offer limited protection in the case of parallel MOSFET connections. Therefore, this paper considers crosstalk features for parallel MOSFET connections, such as parasitic inductance of gate driver trace and gate voltage distribution. A special model is proposed to predict the magnitude of induced gate voltage under different conditions considering the nonlinear behavior of the MOSFET reverse capacitance. A new clamp circuit with an individual low-inductance path for each parallel switch is also proposed to suppress the consequences of crosstalk. The modified circuit operates independently from the main gate driver circuit; therefore, it does not change the switching time and electromagnetic interference pattern of the inverter. The efficiency of the new gate driver is confirmed through simulation and experimental results.
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A gate driver for parallel connected MOSFETs with crosstalk suppression
),
Abstract
New semiconductor materials offer several advantages for modern power systems, including low switching and conduction losses, excellent thermal conduction of a die, and high operation temperature. Avionics is one of the main beneficiaries of the progress in power devices, as it enables more compact and lighter converters for future More Electrical Aircraft. However, these advancements also come with new challenges that must be addressed to avoid potentially dangerous situations and fully utilize the capabilities of fast SiC MOSFETs. One such challenge is the high drain voltage rate during the switching process, which leads to a significant injection of current into the gate circuit (crosstalk effect). This increased current injection increases the risk of shoot-through conduction and thermal runaway. Although preventive measures are well-known, they offer limited protection in the case of parallel MOSFET connections. Therefore, this paper considers crosstalk features for parallel MOSFET connections, such as parasitic inductance of gate driver trace and gate voltage distribution. A special model is proposed to predict the magnitude of induced gate voltage under different conditions considering the nonlinear behavior of the MOSFET reverse capacitance. A new clamp circuit with an individual low-inductance path for each parallel switch is also proposed to suppress the consequences of crosstalk. The modified circuit operates independently from the main gate driver circuit; therefore, it does not change the switching time and electromagnetic interference pattern of the inverter. The efficiency of the new gate driver is confirmed through simulation and experimental results.
References(21)
Biela, J., Schweizer, M., Waffler, S., Kolar, J. W. (2011). SiC versus Si—Evaluation of potentials for performance improvement of inverter and DC–DC converter systems by SiC power semiconductors. IEEE Transactions on Industrial Electronics, 58: 2872–2882.
Oswald, N., Anthony, P., McNeill, N., Stark, B. H. (2014). An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched all-Si, Si-SiC, and all-SiC device combinations. IEEE Transactions on Power Electronics, 29: 2393–2407.
Nawawi, A., Simanjorang, R., Gajanayake, C. J., Gupta, A. K., Tong, C. F., Yin, S., Sakanova, A., Liu, Y., Liu, Y., Kai, M., et al. (2017). Design and demonstration of high power density inverter for aircraft applications. IEEE Transactions on Industry Applications, 53: 1168–1176.
Xun, Q., Xun, B., Li, Z., Wang, P., Cai, Z. (2017). Application of SiC power electronic devices in secondary power source for aircraft. Renewable and Sustainable Energy Reviews, 70: 1336–1342.
Ning, P., Zhang, D., Lai, R., Jiang, D., Wang, F., Boroyevich, D., Burgos, R., Karimi, K., Immanuel, V. D., Solodovnik, E. V. (2013). High-temperature hardware: Development of a 10-kW high-temperature, high-power-density three-phase ac-dc-ac SiC converter. IEEE Industrial Electronics Magazine, 7: 6–17.
Galea, M., Giangrande, P., Madonna, V., Buticchi, G. (2020). Reliability-oriented design of electrical machines: The design process for machines' insulation systems MUST evolve. IEEE Industrial Electronics Magazine, 14: 20–28.
Jahdi, S., Alatise, O., Ortiz Gonzalez, J. A., Bonyadi, R., Ran, L., Mawby, P. (2016). Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules. IEEE Transactions on Industrial Electronics, 63: 849–863.
Long, X., Jun, Z., Pu, L., Chen, D., Liang, W. (2021). Analysis and suppression of high speed dv/dt induced false turn-on in GaN HEMT phase-leg topology. IEEE Access, 9: 45259–45269.
Li, H., Jiang, Y., Qiu, Z., Wang, Y., Ding, Y. (2021). A predictive algorithm for crosstalk peaks of SiC MOSFET by considering the nonlinearity of gate-drain capacitance. IEEE Transactions on Power Electronics, 36: 2823–2834.
Yamaguchi, K., Magome, J., Sasaki, Y. (2016). Fast and low loss gate driver for SiC-MOSFET. Electronics and Communications in Japan, 99: 13–23.
Li, Y., Liang, M., Chen, J., Zheng, T. Q., Guo, H. (2019). A low gate turn-OFF impedance driver for suppressing crosstalk of SiC MOSFET based on different discrete packages. IEEE Journal of Emerging and Selected Topics in Power Electronics, 7: 353–365.
Li, H., Zhong, Y., Yu, R., Yao, R., Long, H., Wang, X., Huang, Z. (2020). Assist gate driver circuit on crosstalk suppression for SiC MOSFET bridge configuration. IEEE Journal of Emerging and Selected Topics in Power Electronics, 8: 1611–1621.
Bosshard, R., Kolar, J. W. (2017). All-SiC 9.5 kW/dm3 on-board power electronics for 50 kW/85 kHz automotive IPT system. IEEE Journal of Emerging and Selected Topics in Power Electronics, 5: 419–431.
Qu, J., Zhang, Q., Yuan, X., Cui, S. (2020). Design of a paralleled SiC MOSFET half-bridge unit with distributed arrangement of DC capacitors. IEEE Transactions on Power Electronics, 35: 10879–10891.
Mirjafari, M., Harb, S., Balog, R. S. (2015). Multiobjective optimization and topology selection for a module-integrated inverter. IEEE Transactions on Power Electronics, 30: 4219–4231.
Zhang, Z., Wang, F., Tolbert, L. M., Blalock, B. J. (2014). Active gate driver for crosstalk suppression of SiC devices in a phase-leg configuration. IEEE Transactions on Power Electronics, 29: 1986–1997.
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Acknowledgements
This work is supported by Natural Science Foundation of China with grant No. 52250610219 and the Ningbo National Science Foundation grant 2023J025.
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This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
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