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iEnergy 2022, 1(1): 100-113 https://doi.org/10.23919/IEN.2022.0001
Article | Open Access | Issue | Published: 25 March 2022

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Show Author's Information Slavko Mocevic1( ),  Jianghui Yu1,  Boran Fan1,  Keyao Sun1,  Yue Xu2,  Joshua Stewart1,  Yu Rong1,  He Song1,  Vladimir Mitrovic1,  Ning Yan1,  Jun Wang3,  Igor Cvetkovic1,  Rolando Burgos1,  Dushan Boroyevich1,  Christina DiMarino1,  Dong Dong1,  Jayesh Kumar Motwani1,  Richard Zhang1
Center for Power Electronics Systems (CPES), Bradley Departement of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA
Center for Electromechanics (CEM), The University of Texas at Austin, Austin, TX 78758, USA
Department of Electrical and Computer Engineering at the University of Nebraska-Lincoln, Lincoln, NE 68588, USA
Keywords:
high density, high efficiency, SiC MOSFET, modular multilevel converter (MMC), switching-cycle control (SCC), integrated capacitor-blocked transistor (ICBT), PEBB, medium-voltage (MV)
Cite this article:
Mocevic S, Yu J, Fan B, et al. Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter. iEnergy, 2022, 1(1): 100-113. https://doi.org/10.23919/IEN.2022.0001
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Abstract Full text About this article

Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gate-driver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Si-based ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.


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About this article

Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter

Show Author's information Slavko Mocevic1( ), Jianghui Yu1, Boran Fan1, Keyao Sun1, Yue Xu2, Joshua Stewart1, Yu Rong1, He Song1, Vladimir Mitrovic1, Ning Yan1, Jun Wang3, Igor Cvetkovic1, Rolando Burgos1, Dushan Boroyevich1, Christina DiMarino1, Dong Dong1, Jayesh Kumar Motwani1, Richard Zhang1
Center for Power Electronics Systems (CPES), Bradley Departement of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA
Center for Electromechanics (CEM), The University of Texas at Austin, Austin, TX 78758, USA
Department of Electrical and Computer Engineering at the University of Nebraska-Lincoln, Lincoln, NE 68588, USA

Abstract

Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching frequency, fast protection, and thermal management associated with the adoption of 10 kV SiC MOSFET, often pose nearly insurmountable barriers to potential users, undoubtedly hindering their penetration in medium-voltage (MV) power conversion. Key novel technologies such as enhanced gate-driver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges. However, purely substituting SiC design instead of Si-based ones in modular MV converters, would expectedly yield only limited gains. Therefore, to further elevate SiC-based designs, novel high-bandwidth control strategies such as switching-cycle control (SCC) and integrated capacitor-blocked transistor (ICBT), as well as high-performance/high-bandwidth communication network are developed. All these technologies combined, overcome barriers posed by state-of-the-art Si designs and unlock system level benefits such as very high power density, high-efficiency, fast dynamic response, unrestricted line frequency operation, and improved power quality, all demonstrated throughout this paper.

Keywords: high density, high efficiency, SiC MOSFET, modular multilevel converter (MMC), switching-cycle control (SCC), integrated capacitor-blocked transistor (ICBT), PEBB, medium-voltage (MV)

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Received: 20 November 2021
Revised: 20 December 2021
Accepted: 29 December 2021
Published: 25 March 2022
Issue date: March 2022

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© The author(s) 2022

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Acknowledgements

This research was conducted under ARPA-e from DOE with the award number DE-AR0000892.

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