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Open Access

Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current

Xiaoguang Chai1,2,3Puqi Ning1,2Han Cao1,2( )Dan Zheng1Huakang Li1,2Yunhao Huang1,2Yuhui Kang1
Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
University of Chinese Academy of Sciences, Beijing 100190, China
Wuxi Power Supply Company of State Grid, Wuxi 214026, China
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Abstract

The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips. Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT, increasing the power density of the motor controller of electric vehicles, and reducing the cost of electric vehicles.

Graphical Abstract

The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips. Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT, increasing the power density of the motor controller of electric vehicles, and reducing the cost of electric vehicles.

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Chinese Journal of Electrical Engineering
Pages 104-112

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Cite this article:
Chai X, Ning P, Cao H, et al. Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current. Chinese Journal of Electrical Engineering, 2022, 8(4): 104-112. https://doi.org/10.23919/CJEE.2022.000042

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Received: 07 June 2021
Revised: 01 December 2021
Accepted: 20 March 2022
Published: 31 December 2022
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