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Hybrid Si/SiC switches constituting a parallel connection of a lower current rated SiC MOSFET and a higher current rated Si IGBT are becoming very attractive solution for designing high frequency and high-power density power electronic converters. Due to the complementary nature of Si IGBT devices (smaller inverter cost and smaller conduction loss) and SiC devices (smaller switching loss and higher junction temperature capability), these novel switch device configurations enable a good tradeoff between cost and efficiency for high power converter applications. One such recent application of hybrid Si/SiC switches for efficiency-cost optimization is an Si/SiC hybrid switch based ANPC inverter proposed in Ref. [
Hybrid Si/SiC switches constituting a parallel connection of a lower current rated SiC MOSFET and a higher current rated Si IGBT are becoming very attractive solution for designing high frequency and high-power density power electronic converters. Due to the complementary nature of Si IGBT devices (smaller inverter cost and smaller conduction loss) and SiC devices (smaller switching loss and higher junction temperature capability), these novel switch device configurations enable a good tradeoff between cost and efficiency for high power converter applications. One such recent application of hybrid Si/SiC switches for efficiency-cost optimization is an Si/SiC hybrid switch based ANPC inverter proposed in Ref. [
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