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Publishing Language: Chinese | Open Access

Direct Ink Writing of Bi2SiO5-Based Ferroelectric Materials

Hong-Tao JIANG( ), Xin-Hao YANG, Ben WANG, Hao WANG
School of Materials Science and Engineering, Shanxi University of Science & Technology, Xi’an 710021, China
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Abstract

in recent years, Bi2SiO5 has attracted widespread attention for its excellent ferroelectric properties and has become a research hotspot for low-cost and environmentally friendly ferroelectric materials. However, traditional molding technology struggles to meet the demands for high precision and complex structures. This paper utilizes direct writing technology to rapidly prepare bulk ferroelectric materials based on Bi2SiO5, laying the foundation for manufacturing devices with complex structures. By studying the rheology of slurries with different PVA contents and solid contents, the optimal preparation conditions were established. A systematic study of direct writing molding process parameters and other factors was conducted, and performance tests demonstrated the ferroelectric properties and energy storage characteristics of Bi2SiO5-based bulk materials at different sintering temperatures. The optimal slurry formulation was determined to be: 73.9 wt.% solid content, 3.2 wt.% polyvinyl alcohol, and 0.5 wt.% each of polyethylene glycol and glycerol. The optimal direct writing molding parameters for Bi2SiO5 ceramic slurry were determined to be: printing nozzle inner diameter of 0.41 mm, substrate material of filter paper, printing speed of 20 mm/s, and layer height set to 0.41 mm. Bi2SiO5 green bodies with close-packed and wood-pile structures were formed at line spacings of 0.50 mm and 0.80 mm, respectively. The Bi2SiO5-based bulk ferroelectric materials prepared by direct writing molding exhibited low ρ and εr values, and slender hysteresis loops. After sintering at 620°C, the material showed high energy storage density (0.0470 J·cm-3) and energy storage efficiency (89.59%). However, when the temperature was increased to 700°C, the material essentially lost its ferroelectricity, resulting in the lowest energy storage density, but still maintained very high energy storage efficiency (98.54%). These results provide important information for the direct writing preparation of Bi2SiO5 ferroelectric materials and highlight their application potential in the energy storage field.

CLC number: TQ174 Document code: A Article ID: 1005-1198(2025)01-0072-14

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Advanced Ceramics
Pages 72-85

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Cite this article:
JIANG H-T, YANG X-H, WANG B, et al. Direct Ink Writing of Bi2SiO5-Based Ferroelectric Materials. Advanced Ceramics, 2025, 46(1): 72-85. https://doi.org/10.16253/j.cnki.37-1226/tq.2025.01.005

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Received: 12 August 2024
Revised: 08 October 2024
Published: 01 February 2025
© Advanced Ceramics.

The articles published in this open access journal are distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/).