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Publishing Language: Chinese

Mechanism of anomalies in operational amplifier induced by proton deep charge-discharge effects

Runjie YUAN1,2Rui CHEN1,2( )Jianwei HAN1,2Qing XIA1Xuan WANG1,2Qian CHEN1
National Space Science Center,Chinese Academy of Sciences,Beijing 100190,China
School of Astronomy and Space Science,University of Chinese Academy of Sciences,Beijing 100049,China
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Abstract

When solar protons and galactic cosmic rays, the primary radiation environments in deep space, accumulate in the dielectric material, they can cause spacecraft electrostatic discharge induced by charging (SESD), which can cause abnormalities in electronic devices. The LM124 integrated operational amplifier are used to study the characteristics of anomalies. The H-simulation program with integrated circuit enphasis (HSPICE) simulation is used to study the SESD sensitive region and mechanism of anomalies. The findings suggest that the output pin may experience transients due to the SESD transient. The amplitude of the output transient is positively associated with the amplitude of the SESD transient, and the duration of the output transient is associated with the circuit operating state. The negative power pin is the SESD sensitive region. The current transient in the input-control transistors and gain transistors caused by SESD induces output voltage anomalies.

CLC number: V221+.3;TB553 Document code: A Article ID: 1001-5965(2026)04-1170-10

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Journal of Beijing University of Aeronautics and Astronautics
Pages 1170-1179

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Cite this article:
YUAN R, CHEN R, HAN J, et al. Mechanism of anomalies in operational amplifier induced by proton deep charge-discharge effects. Journal of Beijing University of Aeronautics and Astronautics, 2026, 52(4): 1170-1179. https://doi.org/10.13700/j.bh.1001-5965.2024.0060

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Received: 25 January 2024
Published: 09 May 2024
© Journal of Beijing University of Aeronautics and Astronautics