Electrical Transport of Pressure-Induced Magnetic Transition in YbMnBi₂

In this work, we performed systematic high-pressure electrical transport and Raman spectroscopy measurements on the topological semimetal YbMnBi₂. The transport results reveal a pronounced evolution of the resistivity-temperature behavior with increasing pressure. A negative magnetoresistance emerges above 16.8 GPa, and a clear anomalous Hall effect characterized by a hysteretic Hall resistivity loop is observed at higher pressures around 30.1 GPa. These transport anomalies, together with the continuous evolution of the Raman spectra in the corresponding pressure range, indicate the formation of a pressure-induced magnetic ordered state with a net magnetic moment component. By systematically analyzing the pressure-dependent evolution of the resistivity-temperature characteristics, magnetoresistance behavior, and Hall effect, this work demonstrates the cooperative tuning of magnetic ordering and topological electronic states in YbMnBi₂ under pressure. Our results provide new experimental insight into pressure-controlled magnetic and transport properties in topological semimetals and highlight their potential relevance for spin-related electronic applications.