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Open Access

Carbon Nanotube Transistor with Short-Term Memory

Changqing YinYuxing LiJiabin WangXuefeng WangYi YangTian-Ling Ren ( )
Institute of Microelectronics, Tsinghua University, Beijing 100084, China.
both the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China.

These authors contributed equally to this work.

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Abstract

Short-Term Memory (STM) is a primary capability of the human brain. Humans use STM to remember a small amount of information, like someone’s phone number, for a short period of time. Usually the duration of STM is less than 1 minute. Synapses, the connections between neurons, are of vital importance to memory in biological brains. For mimicking the memory function of synapses, Carbon Nanotube (CNT) networks based thin-film transistors with Electric Double Layers (EDL) at the dielectric/channel interface were researched in this work. A response characteristic of pre-synaptic potential pulses on the gate electrode of this CNT synaptic transistor was shown remarkably similar to Excitatory Post-Synaptic Current (EPSC) of biological synapses. Also a multi-level modulatable STM of CNT synaptic transistors was investigated. Post-synaptic current was shown with tunable peak values, on-off ratio, and relaxation time.

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Tsinghua Science and Technology
Pages 442-448

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Cite this article:
Yin C, Li Y, Wang J, et al. Carbon Nanotube Transistor with Short-Term Memory. Tsinghua Science and Technology, 2016, 21(4): 442-448. https://doi.org/10.1109/TST.2016.7536722

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Received: 08 December 2015
Accepted: 11 January 2016
Published: 11 August 2016
© The author(s) 2016