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Research Highlight | Open Access

Ultra-scaled MoS2 transistor towards 1-nm-node electronics

Honglin Song1,2, Jie Jiang1,2 ( )
Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics, Central South University, Changsha 410083, People’s Republic of China
State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, People’s Republic of China
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International Journal of Extreme Manufacturing
Volume 8 Issue 4,
August 2026
DOI: 10.1088/2631-7990/ae5b8b

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Cite this article:
Song H, Jiang J. Ultra-scaled MoS2 transistor towards 1-nm-node electronics. International Journal of Extreme Manufacturing, 2026, 8(4). https://doi.org/10.1088/2631-7990/ae5b8b

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Received: 19 January 2026
Revised: 25 February 2026
Accepted: 03 April 2026
Published: 15 April 2026
© 2026 The Author(s).

Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.