AI Chat Paper
Note: Please note that the following content is generated by AMiner AI. SciOpen does not take any responsibility related to this content.
{{lang === 'zh_CN' ? '文章概述' : 'Summary'}}
{{lang === 'en_US' ? '中' : 'Eng'}}
Chat more with AI
PDF (1.3 MB)
Collect
Submit Manuscript AI Chat Paper
Show Outline
Outline
Show full outline
Hide outline
Outline
Show full outline
Hide outline
Research Highlight | Open Access

In situ shape-shifting from 2D patch to 1D fiber enables minimally invasive bio-integrated electronics

Hyunjin Jung1,2,§ , Sungjun Yoon2,3,§, Donghee Son2,3 ( )
Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea
Center for Neuroscience Imaging Research, Institute for Basic Science (IBS), Suwon, Republic of Korea
Department of Chemical and Biomolecular Engineering, Yonsei University (YU), Seoul, Republic of Korea

§ These authors contributed equally to this work and should be considered co-first author.

Show Author Information

References

【1】
【1】
 
 
International Journal of Extreme Manufacturing

{{item.num}}

Comments on this article

Go to comment

< Back to all reports

Review Status: {{reviewData.commendedNum}} Commended , {{reviewData.revisionRequiredNum}} Revision Required , {{reviewData.notCommendedNum}} Not Commended Under Peer Review

Review Comment

Close
Close
Cite this article:
Jung H, Yoon S, Son D. In situ shape-shifting from 2D patch to 1D fiber enables minimally invasive bio-integrated electronics. International Journal of Extreme Manufacturing, 2026, 8(4). https://doi.org/10.1088/2631-7990/ae5138

5

Views

0

Downloads

0

Crossref

0

Web of Science

0

Scopus

0

CSCD

Received: 03 January 2026
Revised: 31 January 2026
Accepted: 11 March 2026
Published: 24 March 2026
© 2026 The Author(s).

Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.