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Topical Review | Open Access

Synthesis of functional chalcogenide materials for memory/sensing devices and their integration into artificial sensory systems

Pengfei Liu1,§ Jae Won Heo1,2,3,§Hyeonmin Bong4,5,§Jinsik Choe4Huiyoung Lee4,5Won-Kyu Lee6 Myung-Gil Kim1,2,3 Donghee Son1,3,7,8 Joohoon Kang9 Taeyong Eom10 ( )Sungjin Park4 ( )In Soo Kim1,2,3,11 ( )
Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Icheon Branch, Korea Institute of Ceramic Engineering and Technology, Icheon 17303, Republic of Korea
Department of Physics, Yonsei University, Seoul 03722, Republic of Korea
Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea
Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Center for Neuroscience Imaging Research, Institute for Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
Department of Semiconductor System Engineering, Sejong University, Seoul 05006, Republic of Korea
Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, United States of America

§ These authors contributed equally to this work and should be considered co-first-author.

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Abstract

With distinctive phase-change and switching properties, chalcogenide materials have emerged as critical components in various cutting-edge technologies. This review attempts to provide an overview of chalcogenide materials, from their fundamental properties to their diverse applications with focus on memory and sensing technologies, which are indispensable components in human-like electronic artificial sensory systems. After reviewing the synthesis and application of chalcogenide materials with respect to dimensionality, we focus on the key advances in (1) memory devices, including phase-change memory (PCM), ovonic threshold switching (OTS) selectors, and selector-only memory (SOM), and (2) sensing devices, including optical sensors, gas sensors, and neuromorphic sensors. Emphasis will be given on how chalcogenide materials can be integrated into next-generation systems, such as wearable platforms, artificial intelligence, and neuromorphic/quantum computing systems, to meet the growing demands for high-performance memory and multi-functional sensing. We also provide an overview of emerging research trends as well as a comprehensive perspective on the current status of research on chalcogenides. Finally, we attempt to provide insights into how chalcogenides can continue to drive technological breakthroughs in both memory and sensing applications while shaping the future landscape of intelligent systems, smart sensing platforms, and sustainable technology development.

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International Journal of Extreme Manufacturing

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Cite this article:
Liu P, Heo JW, Bong H, et al. Synthesis of functional chalcogenide materials for memory/sensing devices and their integration into artificial sensory systems. International Journal of Extreme Manufacturing, 2026, 8(2). https://doi.org/10.1088/2631-7990/ae1db9

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Received: 25 April 2025
Revised: 27 June 2025
Accepted: 10 November 2025
Published: 02 December 2025
© 2025 The Author(s).

Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.