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Paper | Open Access

Preparation of organic N-fused perylenediimide-MXene hybrid material for robust versatile memristive device

Zheng Xu1,6Shijie Chen1,6Yelong Pan1Fangchao Li1Hua Sun2 ( )Qifeng Lu3Yixiang Li1Yue Bai1Yang Xia4Xinli Cheng1( )Chunyan Shi1Chunlan Ma1Cheng Zhang1( )Yang Li1,5 ( )
School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People’s Republic of China
School of Material and Chemistry Engineering, Xuzhou University of Technology, Xuzhou, Jiangsu 221018, People’s Republic of China
School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, Taicang, Jiangsu 215400, People’s Republic of China
School of Chemistry and Life Sciences, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, People’s Republic of China
Kunshan Jingkun Chemistry Company, Suzhou, Jiangsu 215337, People’s Republic of China

6 Zheng Xu and Shijie Chen contributed equally to this work.

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Abstract

Two-dimensional (2D) MXene nanomaterials have shown great promise for electronic devices, attributed to their metal-resembling conductivity and abundant surface functional groups. However, the utilization of intrinsic property of MXene in memristors remains challenging due to its free electron conducting behavior rather than semiconducting property. Here, a N-fused perylenediimide organic semiconductor (CBIN) with conjugated skeleton and heteroatoms (O, S, N) is designed to successfully actuate the surface modification of MXene. The organic CBIN-decorated MXene demonstrates remarkable bipolar memristive properties, such as low threshold voltages of approximate ±1.4 V, exalted retention time exceeding 104 s, and outstanding environmental stability even after exposure to ultraviolet and x-ray irradiations. Furthermore, the CBIN-MXene hybrid memristive device can mimic synaptic plasticity and holds potential for information encoding as quick response codes and image recognition processing. This study provides efficient guidelines for implementing MXene-based memristors by organic semiconductor modulation and opens up possibilities of extending their functionalities into information encryption and neuromorphic computing applications.

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International Journal of Extreme Manufacturing

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Cite this article:
Xu Z, Chen S, Pan Y, et al. Preparation of organic N-fused perylenediimide-MXene hybrid material for robust versatile memristive device. International Journal of Extreme Manufacturing, 2025, 7(2). https://doi.org/10.1088/2631-7990/ad9bff

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Received: 01 July 2024
Revised: 05 October 2024
Accepted: 09 December 2024
Published: 20 December 2024
© 2024 The Author(s).

Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.