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Tribotronics is an emerging research field that focuses on the coupling of triboelectricity and semiconductors. In this review, we summarise and explore three branches of tribotronics. Firstly, we introduce the tribovoltaic effect, which involves direct-current power generation through mechanical friction on semiconductor interfaces. This effect offers significant advantages in terms of high power density compared to traditional insulator-based triboelectric nanogenerators. Secondly, we elaborate on triboelectric modulation, which utilises the triboelectric potential on field-effect transistors. This approach enables active mechanosensation and nanoscale tactile perception. Additionally, we present triboelectric management, which aims to improve energy supply efficiency using semiconductor device technology. This strategy provides an effective microenergy solution for sensors and microsystems. For the interactions between triboelectricity and semiconductors, the research of tribotronics has exhibited the electronics of interfacial friction systems, and the triboelectric technology by electronics. This review demonstrates the promising prospects of tribotronics in the development of new functional devices and self-powered microsystems for intelligent manufacturing, robotic sensing, and the industrial Internet of Things.

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Publication history

Received: 30 January 2023
Revised: 19 April 2023
Accepted: 11 July 2023
Published: 26 July 2023
Issue date: December 2023

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© 2023 The Author(s).

Acknowledgements

The present work was supported by the National Natural Science Foundation of China (Grant Nos. 52250112, 51922023, 52203308, 62104020), the China Postdoctoral Science Foundation (Grant No. 2021M703159), and Fundamental Research Funds for the Central Universities (Grant No. E1EG6804).

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Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

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