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Open Access

Nanoscale air channel devices- inheritance and breakthrough of vacuum tube

Baihong Chena,cLinjie Fana,cJinshun Bib,c( )Zhiqiang LiaZiming XucSandip Majumdard
Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, 100029, China
School of Integrated Circuits, Guizhou Normal University, Guiyang, Guizhou Province, 550025, China
School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, China
Serampore Girls College, Hooghly, West Bengal 712201, India
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Abstract

The nanoscale air channel device (NACD) has recently gained significant attention as a novel vacuum electronic that can be fabricated through nanofabrication technologies. Here, the research and progress of the NACD since it was reviewed, with a focus on working mechanism analysis, nanofabrication technologies, device structure optimization, electrode materials and simulation approach. Furthermore, the application fields and future development of NACD were summarized and prospected. The NACDs are expected to surpass the physical limits of traditional solid transistors due to its advantages such as smaller heat loss, high-speed, resistance to harsh environments.

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Nano Materials Science
Pages 714-725

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Cite this article:
Chen B, Fan L, Bi J, et al. Nanoscale air channel devices- inheritance and breakthrough of vacuum tube. Nano Materials Science, 2024, 6(6): 714-725. https://doi.org/10.1016/j.nanoms.2024.01.002

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Received: 07 September 2023
Accepted: 27 December 2023
Published: 19 February 2024
© 2024 Chongqing University.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).