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Open Access

The microstructural evolution and relaxation strengthening for nano-grained Ni upon low-temperature annealing

Ze Chaia,b( )Bo PengaXukai RencKaiyuan HongaXiaoqi Chena,d
Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, China
Shaoxing Special Equipment Testing Institute, Shaoxing, 312071, China
Shien-Ming Wu School of Intelligent Engineering, South China University of Technology, 511442, China
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Abstract

The microstructural evolution and relaxation strengthening of nano-grained Ni annealed at a temperature range of 493–553 ​K were studied by in situ X-ray diffraction technique, transmission electron microscopy, and microhardness evaluation. Upon low-temperature annealing, the rather limited variations of anisotropic grain size and root-mean-square strain, conforming to an exponential relaxation model, yield a consistent activation energy of approximately 0.5 ​eV, which corresponds to the localized, rapid diffusion of excess vacancies on nonequilibrium surfaces/interfaces and/or defective lattice configurations. Microstructure examinations confirm the grain boundary ordering and excess defect reduction. The relaxation-induced strength enhancement can be attributed to the linear strengthening in the regime of small elastic lattice strains. This study provides an in-depth understanding of low-temperature nanostructural relaxation and its relation to strengthening.

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Nano Materials Science
Pages 726-734

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Cite this article:
Chai Z, Peng B, Ren X, et al. The microstructural evolution and relaxation strengthening for nano-grained Ni upon low-temperature annealing. Nano Materials Science, 2024, 6(6): 726-734. https://doi.org/10.1016/j.nanoms.2023.12.007

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Received: 05 September 2023
Accepted: 12 December 2023
Published: 19 February 2024
© 2024 Chongqing University.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).