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Research paper | Open Access

Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2

Kun Yanga,1, Hyojun Choia,1, Ji Sang Ahnb,1, Eun Ji Jub, Dong In Hana, Se Hyun Kima, Ju Yong Parka, Heejin Honga, Kwan Hyun Parka, Jeong Hwan Hanb( ), Min Hyuk Parka,c,d ( )
Department of Materials Science and Engineering & Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul, 01811, Republic of Korea
Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
Institute of Engineering Research, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea

1 These authors contributed equally to this work.

This article is part of a special issue entitled: HfO2-based film published in Journal of Materiomics.

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Abstract

The impact of oxygen content in the Ru electrode, grown using atomic layer deposition on ferroelectricity in Hf0.5Zr0.5O2 film is investigated. The oxygen content in Ru can be modulated by simply adjusting the deposition temperature from 210 ℃ to 300 ℃. Higher oxygen content in Ru reduces the oxygen vacancy concentration in subsequently grown Hf0.5Zr0.5O2 film, thereby mitigating the wake-up effect. However, the monoclinic phase fraction increased with decreasing Ru deposition temperature, resulting in a decrease in remanent polarization. The decreased oxygen vacancy concentration by oxygen diffusion from Ru electrode deposited at 210 ℃ could decrease the leakage current density compared to that grown at higher temperatures. Nonetheless, the switching endurance of Hf0.5Zr0.5O2 film grown on Ru deposited at 210 ℃ was shorter than those on Ru deposited at 300 ℃ by 2 order of magnitude, being attributed to the oxygen diffusion caused interfacial damages. This observation suggests that the interfacial redox reactions between the electrode and Hf0.5Zr0.5O2 critically influence defect concentration, polymorphism, and the resulting ferroelectricity when using an atomic layer deposited Ru electrode to examine the impact of interfacial redox chemistry.

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Keywords

FerroelectricHafnium oxideZirconium oxideRutheniumInterface chemistry

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Journal of Materiomics
Volume 11 Issue 6,
November 2025
DOI: 10.1016/j.jmat.2025.101110

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Cite this article:
Yang K, Choi H, Ahn JS, et al. Utilization of oxygen content modulated Ru electrode to examine the interfacial redox chemistry of ferroelectric Hf0.5Zr0.5O2. Journal of Materiomics, 2025, 11(6). https://doi.org/10.1016/j.jmat.2025.101110

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Received: 31 March 2025
Revised: 09 June 2025
Accepted: 28 June 2025
Published: 25 July 2025
© 2025 The Authors.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).