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GeTe is a promising medium-temperature thermoelectric material. However, an excessively high concentration of Ge holes leads to a high hole carrier concentration, which can degrade its performance. Though carrier concentration reduction via doping has been pursued as a principal optimization approach, the strong interdependence between key transport parameters and carrier concentration severely limited the overall enhancement efficacy. In this work, a simple composite method is employed to achieve synergistic optimization of carrier concentration and carrier mobility, thereby increasing the power factor and reducing the lattice thermal conductivity. Sb and Fe form a core-shell structure, which effectively scatters phonons and reduces the lattice thermal conductivity, achieving a minimum value of 0.59 W·m−1·K−1 at 723 K. Additionally, Fe doping enhances the effective mass, improves the Seebeck coefficient, and significantly boosts the power factor, which reaches a peak value of 43.0 μW·cm−1·K−2 at 623 K. The results demonstrate that the sample Ge0.885Sb0.1Fe0.015Te achieves a maximum zT of approximately 2.13 at 723 K and an average zT (zTavg) of 1.43 within the temperature range of 323 K–773 K. This work provides an effective path to enhance the performance of GeTe-based thermoelectric materials.

This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
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