Highlights
• Large-area Ag3PO4 film photoanodes are obtained and annealed in vacuum for OER.
• 400 ℃ is the critical temperature for. |Recovery|-|Recrystallization| process during annealing.
• 400 ℃-annealed photoanode shows much improved crystal quality and light absorbance.
• 400 ℃-annealed photoanode shows 88% increase in current density than non-annealed one.
• Drastically improved stability of the 400 ℃-annealed photoanode is also demonstrated.

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