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Estimates of EEPROM Device Lifetime

Leilei LI1,2, Zongguang YU1,2( ), Yue HAO1
School of Microelectronics, Xidian University, Xi’an, 710071, China
58th Research Institute, China Electronics Technology Group Corporation, Wuxi 214035, China
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Abstract

A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, QBD, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, ΔQFG, is measured, the lower limit of the EEPROM life can be related to QBD/ΔQFG. The method is reached by erase/write cycle tests on an EEPROM.

Keywords

electrically erasable programmable read-only memory (EEPROM)time dependent dielectric breakdown (TDDB)breakdown charge

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Tsinghua Science and Technology
Volume 16 Issue 2,
April 2011
Pages 170-174
DOI: 10.1016/S1007-0214(11)70026-8

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Cite this article:
LI L, YU Z, HAO Y. Estimates of EEPROM Device Lifetime. Tsinghua Science and Technology, 2011, 16(2): 170-174. https://doi.org/10.1016/S1007-0214(11)70026-8

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Received: 26 January 2011
Revised: 28 February 2011
Published: 01 April 2011
© Tsinghua University Press 2011