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Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector

Yunbo ZHOU1Yu YANG1Yueer SHAN1,2Huafeng CAO1Bing YANG1,2Zongguang YU1,2( )
School of Internet of Things Engineering, Jiangnan University, Wuxi 214122, China
58th Research Institute, China Electronic Technology Group Corporation, Wuxi 214035, China
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Abstract

An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.

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Tsinghua Science and Technology
Pages 157-163

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Cite this article:
ZHOU Y, YANG Y, SHAN Y, et al. Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector. Tsinghua Science and Technology, 2011, 16(2): 157-163. https://doi.org/10.1016/S1007-0214(11)70024-4

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Received: 02 January 2011
Revised: 10 February 2011
Published: 01 April 2011
© Tsinghua University Press 2011