Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Mufang ZHOU; Min ZHONG; Wenhu XU

doi:10.1007/s40544-022-0713-7

Friction 2023, 11(11): 2073-2090 https://doi.org/10.1007/s40544-022-0713-7

Research Article |

Open Access | Issue | Published: 23 February 2023

Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Show Author's Information Hide Author's Information Mufang ZHOU, Min ZHONG, Wenhu XU(

)

Department of Mechanical Engineering, Key Laboratory of Tribology, Nanchang University, Nanchang 330031, China

Keywords:

sapphire, computational fluid dynamics (CFD), ultrasonic-assisted chemical mechanical polishing (UA-CMP), material removal rate (MRR) predictive model, atomic force microscopy (AFM) in-situ studies

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ZHOU M, ZHONG M, XU W. Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire. Friction, 2023, 11(11): 2073-2090. https://doi.org/10.1007/s40544-022-0713-7

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Abstract

Ultrasonic-assisted chemical mechanical polishing (UA-CMP) can greatly improve the sapphire material removal and surface quality, but its polishing mechanism is still unclear. This paper proposed a novel model of material removal rate (MRR) to explore the mechanism of sapphire UA-CMP. It contains two modes, namely two-body wear and abrasive-impact. Furthermore, the atomic force microscopy (AFM) in-situ study, computational fluid dynamics (CFD) simulation, and polishing experiments were conducted to verify the model and reveal the polishing mechanism. In the AFM in-situ studies, the tip scratched the reaction layer on the sapphire surface. The pit with a 0.22 nm depth is the evidence of two-body wear. The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies. The maximum total velocity and the air volume fraction (AVF) in the central area increased from 0.26 to 0.55 m/s and 20% to 49%, respectively, with the rising amplitudes of 1–3 μm. However, the maximum total velocity rose slightly from 0.33 to 0.42 m/s, and the AVF was nearly unchanged under 40–80 r/min. It indicated that the ultrasonic energy has great effects on the abrasive-impact mode. The UA-CMP experimental results exhibited that there was 63.7% improvement in MRR when the polishing velocities rose from 40 to 80 r/min. The roughness of the polished sapphire surface was R_a = 0.07 nm. It identified that the higher speed achieved greater MRR mainly through the two-body wear mode. This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology.

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Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Show Author's information Hide Author's Information Mufang ZHOU, Min ZHONG, Wenhu XU(

)

Department of Mechanical Engineering, Key Laboratory of Tribology, Nanchang University, Nanchang 330031, China

Abstract

Keywords: sapphire, computational fluid dynamics (CFD), ultrasonic-assisted chemical mechanical polishing (UA-CMP), material removal rate (MRR) predictive model, atomic force microscopy (AFM) in-situ studies

References(81)

[1]

Bristow J K, Tiana D, Parker S C, Walsh A. Defect chemistry of Ti and Fe impurities and aggregates in Al₂O₃. J Mater Chem A 2(17): 6198–6208 (2014)

DOI Google Scholar

[2]

Khattak C P, Shetty R, Schwerdtfeger C R, Ullal S. World’s largest sapphire for many applications. J Cryst Growth 452: 44–48 (2016)

DOI Google Scholar

[3]

Zhang B C, Lei H, Chen Y. Preparation of Ag₂O modified silica abrasives and their chemical mechanical polishing performances on sapphire. Friction 5(4): 429–436 (2017)

DOI Google Scholar

[4]

Xu L, Lei H. Nano-scale surface of ZrO₂ ceramics achieved efficiently by peanut-shaped and heart-shaped SiO₂ abrasives through chemical mechanical polishing. Ceram Int 46(9): 13297–13306 (2020)

DOI Google Scholar

[5]

Chen H, Guo D, Xie G X, Pan G S. Mechanical model of nanoparticles for material removal in chemical mechanical polishing process. Friction 4(2): 153–164 (2016)

DOI Google Scholar

[6]

Dong Y, Lei H, Chen Y, Liu W Q, Xu L, Wang T X, Dai S W. Preparation of irregular silica nanoparticles by the polymer templating for chemical mechanical polishing of sapphire substrates. J Electron Mater 48(7): 4598–4606 (2019)

DOI Google Scholar

[7]

Zhou Y, Pan G S, Shi X L, Gong H, Zou C L, Xu L. Effects of silica abrasive size on sapphire CMP performances and their removal mechanisms. In: Proceedings of the 2015 International Conference on Planarization/CMP Technology (ICPT), Chandler, USA, 2015: 1–3.

Google Scholar

[8]

Kwon T Y, Ramachandran M, Park J G. Scratch formation and its mechanism in chemical mechanical planarization (CMP). Friction 1(4): 279–305 (2013)

DOI Google Scholar

[9]

Zhao D W, Lu X C. Chemical mechanical polishing: Theory and experiment. Friction 1(4): 306–326 (2013)

DOI Google Scholar

[10]

Zhang Z Y, Liu J, Hu W, Zhang L Z, Xie W X, Liao L X. Chemical mechanical polishing for sapphire wafers using a developed slurry. J Manuf Process 62: 762–771 (2021)

DOI Google Scholar

[11]

Xie W X, Zhang Z Y, Liao L X, Liu J, Su H J, Wang S D, Guo D M. Green chemical mechanical polishing of sapphire wafers using a novel slurry. Nanoscale 12(44): 22518–22526 (2020)

DOI Google Scholar

[12]

Zhang Z Y, Cui J F, Zhang J B, Liu D D, Yu Z J, Guo D M. Environment friendly chemical mechanical polishing of copper. Appl Surf Sci 467–468: 5–11 (2019)

DOI Google Scholar

[13]

Zhang Z Y, Liao L X, Wang X Z, Xie W X, Guo D M. Development of a novel chemical mechanical polishing slurry and its polishing mechanisms on a nickel alloy. Appl Surf Sci 506: 144670 (2020)

DOI Google Scholar

[14]

Zhang Z Y, Shi Z F, Du Y F, Yu Z J, Guo L C, Guo D M. A novel approach of chemical mechanical polishing for a titanium alloy using an environment-friendly slurry. Appl Surf Sci 427: 409–415 (2018)

DOI Google Scholar

[15]

Xu L, Zou C L, Shi X L, Pan G S, Luo G H, Zhou Y. Fe–N_x/C assisted chemical–mechanical polishing for improving the removal rate of sapphire. Appl Surf Sci 343: 115–120 (2015)

DOI Google Scholar

[16]

Zhu H L, Tessaroto L A, Sabia R, Greenhut V A, Smith M, Niesz D E. Chemical mechanical polishing (CMP) anisotropy in sapphire. Appl Surf Sci 236(1–4): 120–130 (2004)

DOI Google Scholar

[17]

Wang X, Lei H, Chen R L. CMP behavior of alumina/metatitanic acid core–shell abrasives on sapphire substrates. Precis Eng 50: 263–268 (2017)

DOI Google Scholar

[18]

Dai S W, Lei H, Fu J F. Preparation of SiC/SiO₂ hard core–soft shell abrasive and its CMP behavior on sapphire substrate. J Electron Mater 49(2): 1301–1307 (2020)

DOI Google Scholar

[19]

Liu T T, Lei H. Nd³⁺-doped colloidal SiO₂ composite abrasives: Synthesis and the effects on chemical mechanical polishing (CMP) performances of sapphire wafers. Appl Surf Sci 413: 16–26 (2017)

DOI Google Scholar

[20]

Wang T X, Lei H. Novel polyelectrolyte–Al₂O₃/SiO₂ composite nanoabrasives for improved chemical mechanical polishing (CMP) of sapphire. J Mater Res 34(6): 1073–1082 (2019)

DOI Google Scholar

[21]

Xu L, Zhang X, Kang C X, Wang R R, Zou C L, Zhou Y, Pan G S. Preparation of a novel catalyst (SoFe^III) and its catalytic performance towards the removal rate of sapphire substrate during CMP process. Tribol Int 120: 99–104 (2018)

DOI Google Scholar

[22]

Gao S, Kang R K, Jin Z J, Dong Z G. Research on the polishing performance of CMP slurry for the sapphire crystal. Adv Mater Res 325: 457–463 (2011)

DOI Google Scholar

[23]

Zhao X, Niu X H, Yin D, Wang J C, Zhang K. Research on R-plane sapphire substrate CMP removal rate based on a new-type alkaline slurry. ECS J Solid State Sc 7(3): P135–P141 (2018)

DOI Google Scholar

[24]

Li Z Y, Deng Z H, Hu Y X. Effects of polishing parameters on surface quality in sapphire double-sided CMP. Ceram Int 46(9): 13356–13364 (2020)

DOI Google Scholar

[25]

Zhang Z F, Yan W X, Zhang L, Liu W L, Song Z T. Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing. Microelectron Eng 88(9): 3020–3023 (2011)

DOI Google Scholar

[26]

Li Z Y, Deng Z H, Ge J M, Liu T, Wan L L. Experimental and theoretical analysis of single-sided and double-sided chemical mechanical polishing of sapphire wafers. Int J Adv Manuf Tech 119(7): 5095–5106 (2022)

DOI Google Scholar

[27]

Wang L, Zhou P, Yan Y, Kang R K, Guo D M. Physically- based modeling of pad–asperity scale chemical–mechanical synergy in chemical mechanical polishing. Tribol Int 138: 307–315 (2019)

DOI Google Scholar

[28]

Moriwaki T, Shamoto E. Ultraprecision diamond turning of stainless steel by applying ultrasonic vibration. CIRP Ann 40(1): 559–562 (1991)

DOI Google Scholar

[29]

Moriwaki T, Shamoto E, Inoue K. Ultraprecision ductile cutting of glass by applying ultrasonic vibration. CIRP Ann 41(1): 141–144 (1992)

DOI Google Scholar

[30]

Klocke F, Rübenach O. Ultrasonic assisted diamond turning of steel and glass. In: Proceedings of the International Seminar on Precision Engineering and Micro Technology, Aachen, Germany, 2000: 179–189.

Google Scholar

[31]

Moriwaki T, Shamoto E. Recent development in ultraprecision machining and machine tool technology. In: Proceedings of the Precision Engineering and Micro Technology Proceedings, Aachen, Germany, 2000: 19–20.

Google Scholar

[32]

Chen G, Ren C Z, Zou Y H, Qin X D, Lu L P, Li S P. Mechanism for material removal in ultrasonic vibration helical milling of Ti₆Al₄V alloy. Int J Mach Tools Manu 138: 1–13 (2019)

DOI Google Scholar

[33]

Agarwal S. On the mechanism and mechanics of material removal in ultrasonic machining. Int J Mach Tools Manu 96: 1–14 (2015)

DOI Google Scholar

[34]

Xu W H, Lu X C, Pan G S, Luo J B, Zhang C H. Experimental study of ultrasonic vibration assisted chemical mechanical polishing for sapphire substrate. In: Advanced Tribology. Luo J B, Meng Y G, Shao T M. Zhao Q, Eds. Berlin: Springer Berlin Heidelberg, 2009: 464–466.

DOI

[35]

Wang H, Pei Z J, Cong W L. A feeding-directional cutting force model for end surface grinding of CFRP composites using rotary ultrasonic machining with elliptical ultrasonic vibration. Int J Mach Tools Manu 152: 103540 (2020)

DOI Google Scholar

[36]

Xu W H, Lu X C, Pan G S, Lei Y Z, Luo J B. Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate. Appl Surf Sci 256(12): 3936–3940 (2010)

DOI Google Scholar

[37]

Xu W H, Lu X C, Pan G S, Lei Y Z, Luo J B. Effects of the ultrasonic flexural vibration on the interaction between the abrasive particles; pad and sapphire substrate during chemical mechanical polishing (CMP). Appl Surf Sci 257(7): 2905–2911 (2011)

DOI Google Scholar

[38]

Zhong M, Yuan R J, Li X B, Chen J F, Xu W H. Effects of abrasive particles and pads’ characteristics on ultrasonic assisted chemical mechanical polishing for sapphire. China Surf Eng 31(6): 125–132 (2018) (in Chinese)

Google Scholar

[39]

Deng H G, Zhong M, Xu W H. Effects of different dispersants on chemical reaction and material removal in ultrasonic assisted chemical mechanical polishing of sapphire. ECS J Solid State Sc 11(3): 033007 (2022)

DOI Google Scholar

[40]

Preston F W. The theory and design of plate glass polishing machines. J Glass Tech 11(44): 214–256 (1927)

Google Scholar

[41]

Su Y T, Hung T C, Chang Y Y. On machining rate of hydrodynamic polishing process under semi-contact lubricating condition. Wear 220(1): 22–33 (1998)

DOI Google Scholar

[42]

Luo J F, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: Theory and modeling. IEEE T Semiconduct M 14(2): 112–133 (2001)

DOI Google Scholar

[43]

Chen R L, Li S X. Novel three-body nano-abrasive wear mechanism. Friction 10(5): 677–687 (2022)

DOI Google Scholar

[44]

Chen R L, Jiang R R, Lei H, Liang M. Material removal mechanism during porous silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation. Appl Surf Sci 264: 148–156 (2013)

DOI Google Scholar

[45]

Chen R L, Luo J B, Guo D, Lu X C. Extrusion formation mechanism on silicon surface under the silica cluster impact studied by molecular dynamics simulation. J Appl Phys 104(10): 104907 (2008)

DOI Google Scholar

[46]

Chen R L, Luo J B, Guo D, Lu X C. Surface damages on silicon surfaces created by large silica cluster impacts: Molecular dynamics simulation. In: Advanced Tribology. Luo J B, Meng Y G, Shao T M. Zhao Q, Eds. Berlin: Springer Berlin Heidelberg, 2009: 582–583.

DOI

[47]

Chen R L, Luo J B, Guo D, Lei H. Dynamic phase transformation of crystalline silicon under the dry and wet impact studied by molecular dynamics simulation. J Appl Phys 108(7): 073521 (2010)

DOI Google Scholar

[48]

Zarepour H, Yeo S H. Single abrasive particle impingements as a benchmark to determine material removal modes in micro ultrasonic machining. Wear 288: 1–8 (2012)

DOI Google Scholar

[49]

Luo J F, Dornfeld D A. Material removal regions in chemical mechanical planarization for submicron integrated circuit fabrication: Coupling effects of slurry chemicals, abrasive size distribution, and wafer–pad contact area. IEEE T Semiconduct M 16(1): 45–56 (2003)

DOI Google Scholar

[50]

Chen R L, Li S X, Wang Z, Lu X C. Mechanical model of single abrasive during chemical mechanical polishing: Molecular dynamics simulation. Tribol Int 133: 40–46 (2019)

DOI Google Scholar

[51]

Cook L M. Chemical processes in glass polishing. J Non- Cryst Solids 120(1–3): 152–171 (1990)

DOI Google Scholar

[52]

Fu G H, Chandra A, Guha S, Subhash G. A plasticity-based model of material removal in chemical–mechanical polishing (CMP). IEEE T Semiconduct M 14(4): 406–417 (2001)

DOI Google Scholar

[53]

Zhou J N, Cao Z C, Zhang J P, Zhao C Y, Liu H T. Development and theoretical analysis of novel surface adaptive polishing process for high-efficiency polishing of optical freeform surface. J Manuf Process 80: 874–886 (2022)

DOI Google Scholar

[54]

Nguyen V T, Fang T H. Abrasive mechanisms and interfacial mechanics of amorphous silicon carbide thin films in chemical–mechanical planarization. J Alloys Compd 845: 156100 (2020)

DOI Google Scholar

[55]

Wang S, Zhao Q L, Yang X D. Surface and subsurface microscopic characteristics in sapphire ultra-precision grinding. Tribol Int 174: 107710 (2022)

DOI Google Scholar

[56]

Karimi A, Martin J L. Cavitation erosion of materials. Int Mater Rev 31(1): 1–26 (1986)

DOI Google Scholar

[57]

Liu D F, Yan R M, Chen T. Material removal model of ultrasonic elliptical vibration-assisted chemical mechanical polishing for hard and brittle materials. Int J Adv Manuf Tech 92(1): 81–99 (2017)

DOI Google Scholar

[58]

Zhou M F, Zhong M, Xu W H. Effects of ultrasonic amplitude on sapphire ultrasonic vibration assisted chemical mechanical polishing by experimental and CFD method. Mech Adv Mater Struc 29: 7086–7103 (2022)

DOI Google Scholar

[59]

Popov V L. Contact Mechanics and Friction: Physical Principles and Applications. Berlin: Springer Berlin Heidelberg, 2010.

DOI

[60]

Yu T K, Yu C C, Orlowski M. A statistical polishing pad model for chemical–mechanical polishing. In: Proceedings of the IEEE International Electron Devices Meeting, Washington, USA, 1993: 865–868.

Google Scholar

[61]

Johnson K L. Contact Mechanics. Cambridge (UK): Cambridge University Press, 1987.

[62]

Zhou Y, Pan G S, Shi X L, Gong H, Xu L, Zou C L. AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP). J Mater Sci-Mater El 26(12): 9921–9928 (2015)

DOI Google Scholar

[63]

Shi X L, Pan G S, Zhou Y, Xu L, Zou C L, Gong H. A study of chemical products formed on sapphire (0001) during chemical–mechanical polishing. Surf Coat Technol 270: 206–220 (2015)

DOI Google Scholar

[64]

Zhou Y, Pan G S, Shi X L, Zhang S M, Gong H, Luo G H. Effects of ultra-smooth surface atomic step morphology on chemical mechanical polishing (CMP) performances of sapphire and SiC wafers. Tribol Int 87: 145–150 (2015)

DOI Google Scholar

[65]

Shi X L, Xu L, Zhou Y, Zou C L, Wang R R, Pan G S. An in situ study of chemical–mechanical polishing behaviours on sapphire (0001) via simulating the chemical product-removal process by AFM-tapping mode in both liquid and air environments. Nanoscale 10(42): 19692–19700 (2018)

DOI Google Scholar

[66]

Furumoto T, Saito R, Watanabe K, Ochi Y, Hashimoto Y, Yamaguchi M, Koyano T, Hosokawa A. Thermal stress cleavage of a single-crystal round sapphire bar by carbon dioxide laser. J Mater Process Tech 297: 117237 (2021)

DOI Google Scholar

[67]

Lin Z C, Huang W S, Tsai J S. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads. J Mech Sci Technol 26(8): 2353–2364 (2012)

DOI Google Scholar

[68]

Zhu H L, Niesz D E, Greenhut V A, Sabia R. The effect of abrasive hardness on the chemical-assisted polishing of (0001) plane sapphire. J Mater Res 20(2): 504–520 (2005)

DOI Google Scholar

[69]

Hou Z Y, Niu X H, Lu Y N, Zhang Y C, Zhu Y B. Effect of ZnO–SiO₂ composite abrasive on sapphire polishing performance and mechanism analysis. ECS J Solid State Sc 10(10): 104001 (2021)

DOI Google Scholar

[70]

Vijayakumar A, Du T, Sundaram K B, Desai V. Polishing mechanism of tantalum films by SiO₂ particles. Microelectron Eng 70(1): 93–101 (2003)

DOI Google Scholar

[71]

Zhao Y W, Chang L. A micro-contact and wear model for chemical–mechanical polishing of silicon wafers. Wear 252(3–4): 220–226 (2002)

DOI Google Scholar

[72]

Xu Y C, Lu J, Xu X P. Study on planarization machining of sapphire wafer with soft–hard mixed abrasive through mechanical chemical polishing. Appl Surf Sci 389: 713–720 (2016)

DOI Google Scholar

[73]

Wang Y G, Zhao Y W, Gu J. A new nonlinear-micro- contact model for single particle in the chemical–mechanical polishing with soft pad. J Mater Process Tech 183(2–3): 374–379 (2007)

DOI Google Scholar

[74]

Qin C J, Hu Z H, Tang A M, Yang Z P, Luo S. An efficient material removal rate prediction model for cemented carbide inserts chemical mechanical polishing. Wear 452–453: 203293 (2020)

DOI Google Scholar

[75]

Gruninger M F, Lawn B R, Farabaugh E N, Wachtman J B. Measurement of residual stresses in coatings on brittle substrati by indentation fracture. J Am Ceram Soc 70(5): 344–348 (1987)

DOI Google Scholar

[76]

Lawn B R, Evans A G, Marshall D B. Elastic/plastic indentation damage in ceramics: The median/radial crack system. J Am Ceram Soc 63(9–10): 574–581 (1980)

DOI Google Scholar

[77]

Liang Y D, Chen X, Niu J K, Zhang C, Ma Z L, Xu P F, Li M, Yu T B, Zhao J. Predictive and experimental research on the polishing slurry consumption model for ultrasonic vibration-assisted polishing of optical glass BK7. Ceram Int 48(7): 10048–10058 (2022)

DOI Google Scholar

[78]

Shi X L, Pan G S, Zhou Y, Gu Z H, Gong H, Zou C L. Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC(0001). Appl Surf Sci 307: 414–427 (2014)

DOI Google Scholar

[79]

Kumar A, Kovalchenko A, Pogue V, Pashchenko E, Melkote S N. Ductile mode behavior of silicon during scribing by spherical abrasive particles. Procedia CIRP 45: 147–150 (2016)

DOI Google Scholar

[80]

Sheng C, Zhong M, Xu W H. A study on mechanism of sapphire polishing using the diamond abrasive by molecular dynamics. Mech Adv Mater Struc 30: 319–331 (2023)

DOI Google Scholar

[81]

Wang R R, Guo D, Xie G X, Pan G S. Atomic step formation on sapphire surface in ultra-precision manufacturing. Sci Rep 6(1): 29964 (2016)

DOI Google Scholar

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Received: 30 August 2022

Revised: 09 October 2022

Accepted: 26 October 2022

Published: 23 February 2023

Issue date: November 2023

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This work was supported by the National Natural Science Foundation of China (Nos. 51865030 and 52165025).

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