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Research Article | Open Access

Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate

Si-hwan KIM1Hyo-sok AHN2( )
Department of Transdisciplinary Studies, Seoul National University, Seoul 08826, Republic of Korea
Department of Manufacturing Systems and Design Engineering, Seoul National University of Science and Technology, Seoul 08826, Republic of Korea
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Abstract

The tribological properties and scratch resistance of MoS2 bilayer deposited on SiO2/Si substrates prepared via chemical vapor deposition are investigated. Friction force microscopy (FFM) is employed to investigate the friction and wear properties of the MoS2 bilayer at the nanoscale by applying a normal load ranging from 200 to 1,000 nN. Scratch resistance is measured using the scratch mode in FFM based on a linearly increasing load from 100 to 1,000 nN. Kelvin probe force microscopy (KPFM) is performed to locally measure the surface potential in the tested surface to qualitatively measure the wear/removal of MoS2 layers and identify critical loads associated with the individual failures of the top and bottom layers. The analysis of the contact potential difference values as well as that of KPFM, friction, and height images show that the wear/removal of the top and bottom layers in the MoS2 bilayer system occurred consecutively. The FFM and KPFM results show that the top MoS2 layer begins to degrade at the end of the low friction stage, followed by the bottom layer, thereby resulting in a transitional friction stage owing to the direct contact between the diamond tip and SiO2 substrate. In the stable third stage, the transfer of lubricious MoS2 debris to the tip apex results in contact between the MoS2-transferred tip and SiO2. Nanoscratch test results show two ranges of critical loads, which correspond to the sequential removal of the top and bottom layers.

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Friction
Pages 154-164
Cite this article:
KIM S-h, AHN H-s. Nanotribological properties and scratch resistance of MoS2 bilayer on a SiO2/Si substrate. Friction, 2023, 11(1): 154-164. https://doi.org/10.1007/s40544-022-0595-8

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Received: 31 August 2021
Revised: 30 November 2021
Accepted: 08 January 2022
Published: 12 April 2022
© The author(s) 2022.

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