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Research Article | Open Access

Running-in behavior of a H-DLC/Al2O3 pair at the nanoscale

Pengfei SHI1Junhui SUN1Yunhai LIU1Bin ZHANG2Junyan ZHANG2Lei CHEN1( )Linmao QIAN1( )
Tribology Research Institute, State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, China
State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
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Abstract

Diamond-like carbon (DLC) film has been developed as an extremely effective lubricant to reduce energy dissipation; however, most films should undergo running-in to achieve a super-low friction state. In this study, the running-in behaviors of an H-DLC/Al2O3 pair were investigated through a controllable single-asperity contact study using an atomic force microscope. This study presents direct evidence that illustrates the role of transfer layer formation and oxide layer removal in the friction reduction during running-in. After 200 sliding cycles, a thin transfer layer was formed on the Al2O3 tip. Compared with a clean tip, this modified tip showed a significantly lower adhesion force and friction force on the original H-DLC film, which confirmed the contribution of the transfer layer formation in the friction reduction during running-in. It was also found that the friction coefficient of the H-DLC/Al2O3 pair decreased linearly as the oxygen concentration of the H-DLC substrate surface decreased. This phenomenon can be explained by a change in the contact surface from an oxygen termination with strong hydrogen bond interactions to a hydrogen termination with weak van der Waals interactions. These results provide new insights that quantitatively reveal the running-in mechanism at the nanoscale, which may help with the design optimization of DLC films for different environmental applications.

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Friction
Pages 1464-1473

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Cite this article:
SHI P, SUN J, LIU Y, et al. Running-in behavior of a H-DLC/Al2O3 pair at the nanoscale. Friction, 2021, 9(6): 1464-1473. https://doi.org/10.1007/s40544-020-0429-5

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Received: 28 December 2019
Revised: 29 May 2020
Accepted: 07 July 2020
Published: 23 November 2020
© The author(s) 2020

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