Mechanical model of nanoparticles for material removal in chemical mechanical polishing process

Hao CHEN; Dan GUO; Guoxin XIE; Guoshun PAN

doi:10.1007/s40544-016-0112-z

Friction 2016, 4(2): 153-164 https://doi.org/10.1007/s40544-016-0112-z

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Open Access | Issue | Published: 15 June 2016

Mechanical model of nanoparticles for material removal in chemical mechanical polishing process

Show Author's Information Hide Author's Information Hao CHEN, Dan GUO(

), Guoxin XIE, Guoshun PAN

State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China

Keywords:

nanoparticle, chemical mechanical polishing (CMP), contact theory, material removal

Cite this article:

CHEN H, GUO D, XIE G, et al. Mechanical model of nanoparticles for material removal in chemical mechanical polishing process. Friction, 2016, 4(2): 153-164. https://doi.org/10.1007/s40544-016-0112-z

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Abstract

Chemical mechanical polishing (CMP) is the most effective method for surface planarization in the semiconductor industry. Nanoparticles are significant for material removal and ultra-smooth surface formation. This research investigates the mechanical effects of the material removal in the CMP process. The various contact states of pad, individual particle, and wafer caused by the variations of working conditions and material properties are analyzed. Three different mechanical models for the material removal in the CMP process, i.e., abrasive wear, adhesive wear, and erosive wear are investigated, with a focus on the comparison of the results for different models. The conclusions and methods obtained could potentially contribute to the understanding and evaluation of the CMP process in further work.

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Mechanical model of nanoparticles for material removal in chemical mechanical polishing process

Show Author's information Hide Author's Information Hao CHEN, Dan GUO(

), Guoxin XIE, Guoshun PAN

State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China

Abstract

Keywords: nanoparticle, chemical mechanical polishing (CMP), contact theory, material removal

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Acknowledgements

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Publication history

Received: 04 March 2016

Revised: 21 April 2016

Accepted: 05 May 2016

Published: 15 June 2016

Issue date: June 2021

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Acknowledgements

We appreciate the financial support from the National Natural Science Foundation of China (Nos. 51375255, 91223202, 51321092).

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