Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Tae-Young KWON; Manivannan RAMACHANDRAN; Jin-Goo PARK

doi:10.1007/s40544-013-0026-y

Friction 2013, 1(4): 279-305 https://doi.org/10.1007/s40544-013-0026-y

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Open Access | Issue | Published: 14 November 2013

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Show Author's Information Hide Author's Information Tae-Young KWON, Manivannan RAMACHANDRAN, Jin-Goo PARK(

)

Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea

Keywords:

Chemical mechanical planarization (CMP), defects, scratch, post-CMP cleaning, defect source

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KWON T-Y, RAMACHANDRAN M, PARK J-G. Scratch formation and its mechanism in chemical mechanical planarization (CMP). Friction, 2013, 1(4): 279-305. https://doi.org/10.1007/s40544-013-0026-y

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Abstract Full text About this article

Abstract

Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Scratch formation and its mechanism in chemical mechanical planarization (CMP)

Show Author's information Hide Author's Information Tae-Young KWON, Manivannan RAMACHANDRAN, Jin-Goo PARK(

)

Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea

Abstract

Keywords: Chemical mechanical planarization (CMP), defects, scratch, post-CMP cleaning, defect source

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Received: 14 June 2013

Revised: 09 August 2013

Accepted: 01 September 2013

Published: 14 November 2013

Issue date: December 2013

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