Journal Home > Volume 1 , Issue 4
Friction 2013, 1(4): 327-332 https://doi.org/10.1007/s40544-013-0017-z
Research Article | Open Access | Issue | Published: 20 July 2013

Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper

Show Author's Information Xingliang HE1,  Yunyun CHEN1,2,  Huijia ZHAO3,  Haoming SUN3,  Xinchun LU3,  Hong LIANG1,2,*( )
Department of Mechanical Engineering, Texas A&M University, College Station, TX 77843-3123, USA
Materials Science and Engineering, Texas A&M University, College Station, TX 77843-3123, USA
Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China
Keywords:
Y2O3 nanosheets, chemical-mechanical planarization (CMP), nanoabrasives, slurry flow, wafer-pad contact
Cite this article:
HE X, CHEN Y, ZHAO H, et al. Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper. Friction, 2013, 1(4): 327-332. https://doi.org/10.1007/s40544-013-0017-z
Download citation
EndNote(RIS)
BibTeX

631

Views

28

Downloads

Citations

15

Crossref

N/A

WoS

19

Scopus

0

CSCD

Abstract Full text Electronic supplementary material About this article

Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing. Here we report using new yttrium oxide (Y2O3) nanosheets as slurry abrasives for chemical-mechanical planarization (CMP) of copper. Results showed that the global planarization was improved by 30% using a slurry containing Y2O3 nanosheets in comparison with a standard industrial slurry. During CMP, the two-dimensional square shaped Y2O3 nanosheet is believed to induce the low friction, the better rheological performance, and the laminar flow leading to the decrease in the within-wafer-non-uniformity, surface roughness, as well as dishing. The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.


menu
Abstract
Full text
Outline
Electronic supplementary material
About this article

Y2O3 nanosheets as slurry abrasives for chemical-mechanical planarization of copper

Show Author's information Xingliang HE1, Yunyun CHEN1,2, Huijia ZHAO3, Haoming SUN3, Xinchun LU3, Hong LIANG1,2,*( )
Department of Mechanical Engineering, Texas A&M University, College Station, TX 77843-3123, USA
Materials Science and Engineering, Texas A&M University, College Station, TX 77843-3123, USA
Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China

Abstract

Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing. Here we report using new yttrium oxide (Y2O3) nanosheets as slurry abrasives for chemical-mechanical planarization (CMP) of copper. Results showed that the global planarization was improved by 30% using a slurry containing Y2O3 nanosheets in comparison with a standard industrial slurry. During CMP, the two-dimensional square shaped Y2O3 nanosheet is believed to induce the low friction, the better rheological performance, and the laminar flow leading to the decrease in the within-wafer-non-uniformity, surface roughness, as well as dishing. The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.

Keywords: Y2O3 nanosheets, chemical-mechanical planarization (CMP), nanoabrasives, slurry flow, wafer-pad contact

References(32)

[1]
Liang H, Craven D. Tribology in Chemical-Mechanical Planarization. Boca Raton (USA): CRC Press, 2005.
DOI
[2]
Ein-Eli Y, Starosvetsky D. Review on copper chemical– mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective. Electrochim Acta 52:1825-1838 (2007)
DOI Google Scholar
[3]
Zantye P B, Kumar A, Sikder A K. Chemical mechanical planarization for microelectronics applications. Mater Sci Eng R Rep 45:89-220 (2004)
DOI Google Scholar
[4]
Joo S, Liang H. Tribo-electrochemical characterization of copper with patterned geometry. Microelectron Eng 98:12-18 (2012)
DOI Google Scholar
[5]
Su J, Chen X, Du J, Guo D, Kang R. Analyzing on nonuniformity of material removal in silicon wafer cmp based on abrasive movement trajectories. Adv Mater Res 53-54:119-124 (2008)
DOI Google Scholar
[6]
Hocheng H, Tsai H Y, Tsai M S. Effects of kinematic variables on nonuniformity in chemical mechanical planarization. Int J Mach Tool Manu 40:1651-1669 (2000)
DOI Google Scholar
[7]
Feng T. Nonuniformity of wafer and pad in CMP: Kinematic aspects of view. IEEE Trans Semicond Manuf 20:451-463 (2007)
DOI Google Scholar
[8]
Kim H, Jeong H. Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization. J Electron Mater 33:53-60 (2004)
DOI Google Scholar
[9]
Lee H, Park B, Jeong H. Influence of slurry components on uniformity in copper chemical mechanical planarization. Microelectron Eng 85:689-696 (2008)
DOI Google Scholar
[10]
Sikder A K, Giglio F, Wood J, Kumar A, Anthony M. Optimization of tribological properties of silicon dioxide during the chemical mechanical planarization process. J Electron Mater 30:1520-1526 (2001)
DOI Google Scholar
[11]
He X, Joo S, Xiao H, Liang H. Boron-based nanoparticles for chemical-mechanical polishing of copper films. ECS J Solid State Sci Technol 2:P20-P25 (2013)
DOI Google Scholar
[12]
Kasai T, Bhushan B. Physics and tribology of chemical mechanical planarization. J Phys: Condens Matter 20:225011 (2008)
DOI Google Scholar
[13]
Chemali C E, Moyne J, Khan K, Nadeau R, Smith P, Colt J, Chapple-Sokol J. Multizone uniformity control of a chemical mechanical polishing process utilizing a pre- and postmeasurement strategy. J Vac Sci Technol A 18:1287-1296 (2000)
DOI Google Scholar
[14]
Tso P, Wang Y, Tsai M. A study of carrier motion on a dual-face CMP machine. J Mater Process Technol 116:194-200 (2001)
DOI Google Scholar
[15]
Ward-Smith J. Mechanics of Fluids, 9 Edition. New York (USA): CRC Press, 2011.
[16]
Taylor G. The dispersion of matter in turbulent flow through a pipe. Proc R Soc Lond A 223:446-468 (1954)
DOI Google Scholar
[17]
Spalding D B. Mass transfer in laminar flow. Proc R Soc Lond A 221:78-99 (1954)
DOI Google Scholar
[18]
Luo J, Dornfeld D A. Material removal mechanism in chemical mechanical polishing: Theory and modeling. IEEE Trans Semicond Manuf 14:112-133 (2001)
DOI Google Scholar
[19]
Bozkaya D, Müftü S. A material removal model for cmp based on the contact mechanics of pad, abrasives, and wafer. J Electrochem Soc 156:H890-H902 (2009)
DOI Google Scholar
[20]
Runnels S R, Eyman L M. Tribology analysis of chemical- mechanical polishing. J Electrochem Soc 141:1698-1701 (1994)
DOI Google Scholar
[21]
Chen J M, Fang Y-C. Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing. IEEE Trans Semicond Manuf 15:39-44 (2002)
DOI Google Scholar
[22]
Liang H. Chemical boundary lubrication in chemical- mechanical planarization. Trobol Int 38:235-242 (2005)
DOI Google Scholar
[23]
Grover G S, Liang H, Ganeshkumar S, Fortino W. Effect of slurry viscosity modification on oxide and tungsten CMP. Wear 214:10-13 (1998)
DOI Google Scholar
[24]
Nolan L, Cadien K. Copper CMP: The relationship between polish rate uniformity and lubrication. ECS J Solid State Sci Technol 1:P157-P163 (2012)
DOI Google Scholar
[25]
Lin S, Wu M. A study of the effects of polishing parameters on material removal rate and non-uniformity. Int J Mach Tool Manu 42:99-103 (2002)
DOI Google Scholar
[26]
Fu G, Chandra A. An analytical dishing and step height reduction model for chemical mechanical planarization (CMP). IEEE Trans Semicond Manuf 16:477-485 (2003)
DOI Google Scholar
[27]
Nguyen V H, Daamen R, van Kranenburg H, van der Velden P, Woerlee P H. A physical model for dishing during metal CMP. J Electrochem Soc 150:G689-G693 (2003)
DOI Google Scholar
[28]
Vlassak J J. A contact-mechancis based model for dishing and erosion in chemical-mechanical polishing. Mater Res Soc Symp 671:M4.6.1-M4.6.6 (2001)
DOI Google Scholar
[29]
Saka N, Lai J Y, Chun J H, Shu N P. Mechanisms of the chemical mechanical polishing (CMP) process in integrated circuit fabrication. CIRP Ann Manuf Technol 50:233-238 (2001)
DOI Google Scholar
[30]
Kondo S, Sakuma N, Homma Y, Goto Y, Ohashi N, Yamaguchi H, Owada N. Abrasive-free polishing for copper damascene interconnection. J Electrochem Soc 147:3907-3913 (2000)
DOI Google Scholar
[31]
Chiu J, Yu C, Shen S. Application of soft landing to the process control of chemical mechanical polishing. Microelectron Eng 65:345-356 (2003)
DOI Google Scholar
[32]
Denardis D, Sorooshian J, Habiro M, Rogers C, Philipossian A. Tribology and removal rate characteristics of abrasive-free slurries for copper CMP applications. Jpn J Appl Phys 42:6809-6814 (2003)
DOI Google Scholar
File
40544_2013_17_MOESM1_ESM.pdf (331.8 KB)
Publication history
Copyright
Acknowledgements
Rights and permissions

Publication history

Received: 13 March 2013
Revised: 22 May 2013
Accepted: 30 May 2013
Published: 20 July 2013
Issue date: December 2013

Copyright

© The author(s) 2013

Acknowledgements

The authors wish to acknowledge the support of TAMU-NSFC. The authors wish to thank Mr. Nezar Nabelsi for proofreading the manuscript.

Rights and permissions

This article is published with open access at Springerlink.com

Open Access: This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.

Return