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Ceramic dielectric capacitors have a broad scope of application in pulsed power supply devices. Relaxor behavior has manifested decent energy storage capabilities in dielectric materials due to its fast polarization response. In addition, an ultrahigh energy storage density can also be achieved in NaNbO3 (NN)-based ceramics by combining antiferroelectric and relaxor characteristics. Most of the existing reports about lead-free dielectric ceramics, nevertheless, still lack the relevant research about domain evolution and relaxor behavior. Therefore, a novel lead-free solid solution, (1−x)NaNbO3xBi(Zn0.5Sn0.5)O3 (abbreviated as xBZS, x = 0.05, 0.10, 0.15, and 0.20) was designed to analyze the domain evolution and relaxor behavior. Domain evolutions in xBZS ceramics confirmed the contribution of the relaxor behavior to their decent energy storage characteristics caused by the fast polarization rotation according to the low energy barrier of polar nanoregions (PNRs). Consequently, a high energy storage density of 3.14 J/cm3 and energy efficiency of 83.30% are simultaneously available with 0.10BZS ceramics, together with stable energy storage properties over a large temperature range (20–100 ℃) and a wide frequency range (1–200 Hz). Additionally, for practical applications, the 0.10BZS ceramics display a high discharge energy storage density (Wdis ≈ 1.05 J/cm3), fast discharge rate (t0.9 ≈ 60.60 ns), and high hardness (H ≈ 5.49 GPa). This study offers significant insights on the mechanisms of high performance lead-free ceramic energy storage materials.


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Realizing enhanced energy storage and hardness performances in 0.90NaNbO3–0.10Bi(Zn0.5Sn0.5)O3 ceramics

Show Author's information Xiaoyan DONGaXu LIbHongyun CHENaQinpeng DONGaJiaming WANGaXiang WANGaYue PANaXiuli CHENa( )Huanfu ZHOUa
Collaborative Innovation Center for Exploration of Hidden Nonferrous Metal Deposits and Development of New Materials in Guangxi, Key Laboratory of Nonferrous Materials and New Processing Technology, Ministry of Education, School of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

Abstract

Ceramic dielectric capacitors have a broad scope of application in pulsed power supply devices. Relaxor behavior has manifested decent energy storage capabilities in dielectric materials due to its fast polarization response. In addition, an ultrahigh energy storage density can also be achieved in NaNbO3 (NN)-based ceramics by combining antiferroelectric and relaxor characteristics. Most of the existing reports about lead-free dielectric ceramics, nevertheless, still lack the relevant research about domain evolution and relaxor behavior. Therefore, a novel lead-free solid solution, (1−x)NaNbO3xBi(Zn0.5Sn0.5)O3 (abbreviated as xBZS, x = 0.05, 0.10, 0.15, and 0.20) was designed to analyze the domain evolution and relaxor behavior. Domain evolutions in xBZS ceramics confirmed the contribution of the relaxor behavior to their decent energy storage characteristics caused by the fast polarization rotation according to the low energy barrier of polar nanoregions (PNRs). Consequently, a high energy storage density of 3.14 J/cm3 and energy efficiency of 83.30% are simultaneously available with 0.10BZS ceramics, together with stable energy storage properties over a large temperature range (20–100 ℃) and a wide frequency range (1–200 Hz). Additionally, for practical applications, the 0.10BZS ceramics display a high discharge energy storage density (Wdis ≈ 1.05 J/cm3), fast discharge rate (t0.9 ≈ 60.60 ns), and high hardness (H ≈ 5.49 GPa). This study offers significant insights on the mechanisms of high performance lead-free ceramic energy storage materials.

Keywords: energy storage, hardness, NaNbO3 (NN)-based, domain evolutions

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Publication history

Received: 28 July 2021
Revised: 09 November 2021
Accepted: 08 January 2022
Published: 21 March 2022
Issue date: May 2022

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© The Author(s) 2022.

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 12064007, 11664008, and 61761015), the Natural Science Foundation of Guangxi (Nos. 2018GXNSFFA050001, 2017GXNSFDA198027, and 2017GXNSFFA198011), and High Level Innovation Team and Outstanding Scholar Program of Guangxi Institutes.

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