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Motivated by the fast-developing spin dynamics in ferromagnetic/piezoelectric structures, this study attempts to manipulate magnons (spin-wave excitations) by the converse magnetoelectric (ME) coupling. Herein, electric field (E-field) tuning magnetism, especially the surface spin wave, is accomplished in Ni/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) multiferroic heterostructures. The Kerr signal (directly proportional to magnetization) changes of Ni film are observed when direct current (DC) or alternative current (AC) voltage is applied to PMN-PT substrate, where the signal can be modulated breezily even without extra magnetic field (H-field) in AC-mode measurement. Deserved to be mentioned, a surface spin wave switch of "1" (i.e., "on" ) and "0" (i.e., "off" ) has been created at room temperature upon applying an E-field. In addition, the magnetic anisotropy of heterostructures has been investigated by E-field-induced ferromagnetic resonance (FMR) shift, and a large 490 Oe shift of FMR is determined at the angle of 45° between H-field and heterostructure plane.
Motivated by the fast-developing spin dynamics in ferromagnetic/piezoelectric structures, this study attempts to manipulate magnons (spin-wave excitations) by the converse magnetoelectric (ME) coupling. Herein, electric field (E-field) tuning magnetism, especially the surface spin wave, is accomplished in Ni/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) multiferroic heterostructures. The Kerr signal (directly proportional to magnetization) changes of Ni film are observed when direct current (DC) or alternative current (AC) voltage is applied to PMN-PT substrate, where the signal can be modulated breezily even without extra magnetic field (H-field) in AC-mode measurement. Deserved to be mentioned, a surface spin wave switch of "1" (i.e., "on" ) and "0" (i.e., "off" ) has been created at room temperature upon applying an E-field. In addition, the magnetic anisotropy of heterostructures has been investigated by E-field-induced ferromagnetic resonance (FMR) shift, and a large 490 Oe shift of FMR is determined at the angle of 45° between H-field and heterostructure plane.
This work was supported by the National Natural Science Foundation of China (Nos. 51772126, 21978110, and 52171210), Jilin Province Science and Technology Development Program (Nos. 20200201277JC, 20200201279JC, and 20200201187JC), and the Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education (Nos. 2017002, 2016010, 2015003, and 2015011).
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