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Journal of Advanced Ceramics 2021, 10(4): 704-713 https://doi.org/10.1007/s40145-021-0465-2
Research Article | Open Access | Issue | Published: 05 August 2021

Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Show Author's Information Wei RENa( ),  Guang-Dao YANGb,  Ai-Ling FENGc,  Rui-Xia MIAOa,  Jun-Bo XIAa,  Yong-Gang WANGb
School of Science & School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China
Institute of Physics & Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, China
Keywords:
optical property, anneal, Ta2O5 films, electrochemical stability
Cite this article:
REN W, YANG G-D, FENG A-L, et al. Annealing effects on the optical and electrochemical properties of tantalum pentoxide films. Journal of Advanced Ceramics, 2021, 10(4): 704-713. https://doi.org/10.1007/s40145-021-0465-2
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Abstract Full text About this article

Tantalum pentoxide (Ta2O5) has attracted intensive attention due to their excellent physicochemical properties. Ta2O5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 ℃. X-ray diffraction (XRD) results show that amorphous Ta2O5 thin films form from 300 to 700 ℃ and then a phase transition to polycrystalline β-Ta2O5 films occurs since 900 ℃. The surface morphology of the Ta2O5 films is uniform and smooth. The resulted Ta2O5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta2O5 films is broadened from 4.32 to 4.46 eV by annealing. The 900 ℃ polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.


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About this article

Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Show Author's information Wei RENa( ), Guang-Dao YANGb, Ai-Ling FENGc, Rui-Xia MIAOa, Jun-Bo XIAa, Yong-Gang WANGb
School of Science & School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China
Institute of Physics & Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, China

Abstract

Tantalum pentoxide (Ta2O5) has attracted intensive attention due to their excellent physicochemical properties. Ta2O5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 ℃. X-ray diffraction (XRD) results show that amorphous Ta2O5 thin films form from 300 to 700 ℃ and then a phase transition to polycrystalline β-Ta2O5 films occurs since 900 ℃. The surface morphology of the Ta2O5 films is uniform and smooth. The resulted Ta2O5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta2O5 films is broadened from 4.32 to 4.46 eV by annealing. The 900 ℃ polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.

Keywords: optical property, anneal, Ta2O5 films, electrochemical stability

References(48)

[1]
Qi HJ, Xiao XD, He HB, et al. Optical properties and microstructure of Ta2O5 biaxial film. Appl Opt 2009, 48: 127-133.
DOI Google Scholar
[2]
Wang SC, Liu KY, Huang JL. Tantalum oxide film prepared by reactive magnetron sputtering deposition for all-solid-state electrochromic device. Thin Solid Films 2011, 520: 1454-1459.
DOI Google Scholar
[3]
Chaneliere C, Autran JL, Devine RAB, et al. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications. Mater Sci Eng R: Rep 1998, 22: 269-322.
DOI Google Scholar
[4]
Doumuki T, Tamada H, Saitoh M. Highly efficient Cherenkov-type second harmonic generation in a Ta2O5/ KTiOPO4 waveguide. Appl Phys Lett 1994, 64: 3533-3535.
DOI Google Scholar
[5]
Cid M, Stem N, Brunetti C, et al. Improvements in anti-reflection coatings for high-efficiency silicon solar cells. Surf Coat Technol 1998, 106: 117-120.
DOI Google Scholar
[6]
Cui Y, Liu SJ, He HB, et al. Influence of vacuum organic contaminations on laser-induced damage of 1064 nm anti-reflective coatings. Chinese Phys Lett 2007, 24: 2873-2875.
DOI Google Scholar
[7]
Song YZ, Sakurai T, Maruta K, et al. Optical and structural properties of dense SiO2, Ta2O5 and Nb2O5 thin-films deposited by indirectly reactive sputtering technique. Vacuum 2000, 59: 755-763.
DOI Google Scholar
[8]
Quah HJ, Ahmad FH, Lim WF, et al. Growth and characterization of ternary HfxTayOz films via nitrogen- infused wet oxidation. ACS Omega 2020, 5: 26347-26356.
DOI Google Scholar
[9]
Sekido Y. Characteristics of Ta2O5 thin film prepared by electron beam heating method. Electron Commun Jpn Part II: Electron 1994, 77: 54-61.
DOI Google Scholar
[10]
Xu C, Yang S, Wang JF, et al. Effect of oxygen vacancy on the band gap and nanosecond laser-induced damage threshold of Ta2O5 films. Chinese Phys Lett 2012, 29: 084207.
DOI Google Scholar
[11]
Xu C, Dong HC, Ma JY, et al. Influences of SiO2 protective layers and annealing on the laser-induced damage threshold of Ta2O5 films. Chin Opt Lett 2008, 6: 228-230.
DOI Google Scholar
[12]
Cheng WH, Chi SF, Chu AK. Effect of thermal stresses on temperature dependence of refractive index for Ta2O5 dielectric films. Thin Solid Films 1999, 347: 233-237.
DOI Google Scholar
[13]
Ezhilvalavan S, Tseng TY. Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - A review. J Mater Sci: Mater Electron 1999, 10: 9-31.
DOI Google Scholar
[14]
Atanassova E, Paskaleva A. Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. Microelectron Reliab 2007, 47: 913-923.
DOI Google Scholar
[15]
Zhou MF, Fu ZW, Yang HJ, et al. Pulsed laser deposition of tantalum oxide thin films. Appl Surf Sci 1997, 108: 399-403.
DOI Google Scholar
[16]
Xia SL, Ni JF, Savilov SV, et al. Oxygen-deficient Ta2O5 nanoporous films as self-supported electrodes for lithium microbatteries. Nano Energy 2018, 45: 407-412.
DOI Google Scholar
[17]
Hudner J, Hellberg PE, Kusche D, et al. Tantalum oxide films on silicon grown by tantalum evaporation in atomic oxygen. Thin Solid Films 1996, 281-282: 415-418.
DOI Google Scholar
[18]
Mannequin C, Tsuruoka T, Hasegawa T, et al. Identification and roles of nonstoichiometric oxygen in amorphous Ta2O5 thin films deposited by electron beam and sputtering processes. Appl Surf Sci 2016, 385: 426-435.
DOI Google Scholar
[19]
Devine RAB, Chaneliere C, Autran JL, et al. Use of carbon-free Ta2O5 thin-films as a gate insulator. Microelectron Eng 1997, 36: 61-64.
DOI Google Scholar
[20]
Lukosius M, Kaynak CB, Kubotsch S, et al. Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal-Insulator-Metal capacitors. Thin Solid Films 2012, 520: 4576-4579.
DOI Google Scholar
[21]
Krishnan RR, Nissamudeen KM, Gopchandran KG, et al. Effect of doping and substrate temperature on the structural and optical properties of reactive pulsed laser ablated tin oxide doped tantalum oxide thin films. Vacuum 2010, 84: 1204-1211.
DOI Google Scholar
[22]
Byeon SG, Tzeng Y. High performance sputtered/anodized tantalum oxide capacitors. In: Proceedings of the International Electron Devices Meeting, 1988: 722-725.
[23]
Reddy PK, Jawalekar SR. Improved properties of TaNTa2O5NxAl capacitors. Thin Solid Films 1979, 64: 71-76.
DOI Google Scholar
[24]
Ozer N, Lampert CM. Structural and optical properties of sol-gel deposited proton conducting Ta2O5 films. J Sol-Gel Sci Technol 1997, 8: 703-709.
DOI Google Scholar
[25]
Zhang DX, Zheng YX, Cai QY, et al. Thickness- dependence of optical constants for Ta2O5 ultrathin films. Appl Phys A 2012, 108: 975-979.
DOI Google Scholar
[26]
Masse JP, Szymanowski H, Zabeida O, et al. Stability and effect of annealing on the optical properties of plasma-deposited Ta2O5 and Nb2O5 films. Thin Solid Films 2006, 515: 1674-1682.
DOI Google Scholar
[27]
He X, Wu J, Li X, et al. Characterization of high quality tantalum pentoxide film synthesized by oxygen plasma enhanced pulsed laser deposition. Thin Solid Films 2009, 518: 94-98.
DOI Google Scholar
[28]
Liu WJ, Chien CH. Influences of residual argon gas and thermal annealing on Ta2O5 thin films. Jpn J Appl Phys 2005, 44: 181-186.
DOI Google Scholar
[29]
Ghodsi FE, Tepehan FZ, Tepehan GG. Optical properties of Ta2O5 thin films deposited using the spin coating process. Thin Solid Films 1997, 295: 11-15.
DOI Google Scholar
[30]
Huang AP, Chu PK. Crystallization improvement of Ta2O5 thin films by the addition of water vapor. J Cryst Growth 2005, 274: 73-77.
DOI Google Scholar
[31]
Chandra SVJ, Uthanna S, Rao GM. Effect of substrate temperature on the structural, optical and electrical properties of dc magnetron sputtered tantalum oxide films. Appl Surf Sci 2008, 254: 1953-1960.
DOI Google Scholar
[32]
Dimitrova T, Arshak K, Atanassova E. Crystallization effects in oxygen annealed Ta2O5 thin films on Si. Thin Solid Films 2001, 381: 31-38.
DOI Google Scholar
[33]
Xu C, Dong HC, Yuan L, et al. Investigation of annealing effects on the laser-induced damage threshold of amorphous Ta2O5 films. Opt Laser Technol 2009, 41: 258-263.
DOI Google Scholar
[34]
Porqueras I, Marti J, Bertran E. Optical and electrical characterisation of Ta2O5 thin films for ionic conduction applications. Thin Solid Films 1999, 343-344: 449-452.
DOI Google Scholar
[35]
Xu C, Yao JK, Ma JY, et al. Laser-induced damage threshold in n-on-1 regime of Ta2O5 films at 532, 800, and 1064 nm. Chin Opt Lett 2007, 5: 727-729.
Google Scholar
[36]
Xu C, Xiao QL, Ma JY, et al. High temperature annealing effect on structure, optical property and laser-induced damage threshold of Ta2O5 films. Appl Surf Sci 2008, 254: 6554-6559.
DOI Google Scholar
[37]
Gladczuk L, Patel A, Singh Paur C, et al. Tantalum films for protective coatings of steel. Thin Solid Films 2004, 467: 150-157.
DOI Google Scholar
[38]
Zhou JC, Luo DT, Li YZ, et al. Properties of Ta2O5 thin films deposited by dc reactive magnetron sputtering. Int J Mod Phys B 2009, 23: 5275-5282.
DOI Google Scholar
[39]
Li XH, Ji T, Hu J, et al. Optimization of specimen preparation of thin cell section for AFM observation. Ultramicroscopy 2008, 108: 826-831.
DOI Google Scholar
[40]
Tauc J. Amorphous and Liquid Semiconductors. Boston: Springer US, 1974.
DOI
[41]
Meng LJ, dos Santos MP. Investigations of titanium oxide films deposited by d.c. reactive magnetron sputtering in different sputtering pressures. Thin Solid Films 1993, 226: 22-29.
DOI Google Scholar
[42]
Augustyn V, Come J, Lowe MA, et al. High-rate electrochemical energy storage through Li+ intercalation pseudocapacitance. Nat Mater 2013, 12: 518-522.
DOI Google Scholar
[43]
Xie ZK, Wu YM, Kai S, et al. A newly competitive electrochemical sensor for sensitive determination of chrysin based on electrochemically activated Ta2O5 particles modified carbon paste electrode. Electroanalysis 2017, 29: 835-842.
DOI Google Scholar
[44]
Xie ZK, Li GP, Fu YM, et al. Sensitive, simultaneous determination of chrysin and baicalein based on Ta2O5-chitosan composite modified carbon paste electrode. Talanta 2017, 165: 553-562.
DOI Google Scholar
[45]
NuLi YN, Fu ZW, Chu YQ, et al. Electrochemical and electrochromic characteristics of Ta2O5-ZnO composite films. Solid State Ionics 2003, 160: 197-207.
DOI Google Scholar
[46]
Simpson R, White RG, Watts JF, et al. XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide. Appl Surf Sci 2017, 405: 79-87.
DOI Google Scholar
[47]
Wu T, Jin, Xiao W, et al. Thin pellets: Fast electrochemical preparation of capacitor tantalum powders. Chem Mater 2007, 19: 153-160.
DOI Google Scholar
[48]
Wen TC, Hu CC. Hydrogen and oxygen evolutions on Ru-Ir binary oxides. J Electrochem Soc 1992, 139: 2158-2163.
DOI Google Scholar
Publication history
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Publication history

Received: 27 September 2020
Revised: 25 January 2021
Accepted: 08 February 2021
Published: 05 August 2021
Issue date: August 2021

Copyright

© The Author(s) 2021

Acknowledgements

This work was supported by the Joint Research Funds of Department of Science & Technology of Shaanxi Province and Northwestern Polytechnical University (Grant No. 2020GXLH-Z-029).

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