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Research Article | Open Access

Annealing effects on the optical and electrochemical properties of tantalum pentoxide films

Wei RENa( )Guang-Dao YANGbAi-Ling FENGcRui-Xia MIAOaJun-Bo XIAaYong-Gang WANGb
School of Science & School of Electronic Engineering, Xi’an University of Posts & Telecommunications, Xi’an 710121, China
School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China
Institute of Physics & Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, China
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Tantalum pentoxide (Ta2O5) has attracted intensive attention due to their excellent physicochemical properties. Ta2O5 films were synthesized via electron beam evaporation (EBE) and subsequently annealed at different temperatures ranging from 300 to 900 ℃. X-ray diffraction (XRD) results show that amorphous Ta2O5 thin films form from 300 to 700 ℃ and then a phase transition to polycrystalline β-Ta2O5 films occurs since 900 ℃. The surface morphology of the Ta2O5 films is uniform and smooth. The resulted Ta2O5 films exhibit excellent transmittance properties for wavelengths ranging from 300 to 1100 nm. The bandgap of the Ta2O5 films is broadened from 4.32 to 4.46 eV by annealing. The 900 ℃ polycrystalline film electrode has improved electrochemical stability, compared to the other amorphous counterparts.


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Journal of Advanced Ceramics
Pages 704-713
Cite this article:
REN W, YANG G-D, FENG A-L, et al. Annealing effects on the optical and electrochemical properties of tantalum pentoxide films. Journal of Advanced Ceramics, 2021, 10(4): 704-713.








Web of Science






Received: 27 September 2020
Revised: 25 January 2021
Accepted: 08 February 2021
Published: 05 August 2021
© The Author(s) 2021

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