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Research Article | Open Access

Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Jing YANa,b,cYanling WANGdChun-Ming WANGeJun OUYANGb( )
Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China
Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Shandong Provincial Key Laboratory of Molecular Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
College of Physics and Electronic Engineering, Qilu Normal University, Jinan 250013, China
Amperex Technology Limited, Ningde 352100, China
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge–discharge cycles) and a good thermal stability (from –170 to 150 ℃) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.


Chu B, Zhou X, Ren K, et al. A dielectric polymer with high electric energy density and fast discharge speed. Science 2006, 313: 334-336.
Cheng H, Ouyang J, Zhang YX, et al. Demonstration of ultra-high recyclable energy densities in domain-engineered ferroelectric films. Nat Commun 2017, 8: 1999.
Yao K, Chen ST, Rahimabady M, et al. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors. IEEE Trans Ultrason Ferroelectr Freq Control 2011, 58: 1968-1974.
Pan ZB, Wang P, Hou X, et al. Fatigue-free aurivillius phase ferroelectric thin films with ultrahigh energy storage performance. Adv Energy Mater 2020, 10: 2001536.
Yang BB, Guo MY, Tang XW, et al. Lead-free A2Bi4Ti5O18 thin film capacitors (A = Ba and Sr) with large energy storage density, high efficiency, and excellent thermal stability. J Mater Chem C 2019, 7: 1888-1895.
Pan H, Ma J, Ma J, et al. Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering. Nat Commun 2018, 9: 1813.
Tong S, Ma BH, Narayanan M, et al. Lead lanthanum zirconate titanate ceramic thin films for energy storage. ACS Appl Mater Interfaces 2013, 5: 1474-1480.
Sun ZX, Wang Z, Tian Y, et al. Progress, outlook, and challenges in lead-free energy-storage ferroelectrics. Adv Electron Mater 2020, 6: 1900698.
Palneedi H, Peddigari M, Hwang GT, et al. High-performance dielectric ceramic films for energy storage capacitors: Progress and outlook. Adv Funct Mater 2018, 28: 1803665.
Lv P, Yang CH, Qian J, et al. Flexible lead-free perovskite oxide multilayer film capacitor based on (Na0.8K0.2)0.5Bi0.5TiO3/ Ba0.5Sr0.5(Ti0.97Mn0.03)O3 for high-performance dielectric energy storage. Adv Energy Mater 2020, 10: 1904229.
Fan QL, Ma CR, Li Y, et al. Realization of high energy density in an ultra-wide temperature range through engineering of ferroelectric sandwich structures. Nano Energy 2019, 62: 725-733.
Sun ZX, Ma CR, Liu M, et al. Ultrahigh energy storage performance of lead-free oxide multilayer film capacitors via interface engineering. Adv Mater 2017, 29: 1604427.
Lee HN, Hesse D, Zakharov N, et al. Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates. Science 2002, 296: 2006-2009.
Watanabe T, Funakubo H, Saito K, et al. Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching. Appl Phys Lett 2002, 81: 1660-1662.
Zhang YX, Ouyang J, Zhang JC, et al. Strain engineered CaBi2Nb2O9 thin films with enhanced electrical properties. ACS Appl Mater Interfaces 2016, 8: 16744-16751.
Ramesh R, Schlom DG. Orienting ferroelectric films. Science 2002, 296: 1975-1976.
Park BH, Kang BS, Bu SD, et al. Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature 1999, 401: 682-684.
De Araujo CAP, Cuchiaro JD, McMillan LD, et al. Fatigue-free ferroelectric capacitors with platinum electrodes. Nature 1995, 374: 627-629.
Maiwa H, Iizawa N, Togawa D, et al. Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics. Appl Phys Lett 2003, 82: 1760-1762.
Wang YL, Wang YY, Zhang YX, et al. Orienting high Curie point CaBi2Nb2O9 ferroelectric films on Si at 500 ℃. Ceram Int 2019, 45: 20818-20823.
Hu GD, Fan SH, Cheng X. Anisotropy of ferroelectric and piezoelectric properties of Bi3.15Pr0.85Ti3O12 thin films on Pt(100)/Ti/SiO2/Si substrates. J Appl Phys 2007, 101: 054111.
Peng B, Xie ZK, Yue ZX, et al. Improvement of the recoverable energy storage density and efficiency by utilizing the linear dielectric response in ferroelectric capacitors. Appl Phys Lett 2014, 105: 052904.
Yan H, Zhang H, Ubic R, et al. A lead-free high-curie-point ferroelectric ceramic, CaBi2Nb2O9. Adv Mater 2005, 17: 1261-1265.
Zhang YX, Wang CM, Li Y, et al. Enhancing electromechanical properties of CaBi2Nb2O9 thin films grown on Si. Ceram Int 2016, 42: 17928-17931.
Meng XJ, Cheng JG, Sun JL, et al. Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films. J Cryst Growth 2000, 220: 100-104.
Bennett LH, Della Torre E. Analysis of wasp-waist hysteresis loops. J Appl Phys 2005, 97: 10E502.
Yan J, Hu GD, Liu ZM, et al. Enhanced ferroelectric properties of predominantly (100)-oriented CaBi4Ti4O15 thin films on Pt/Ti/SiO2/Si substrates. J Appl Phys 2008, 103: 056109.
Wang YY, Cheng HB, Yan J, et al. Large piezoelectricity on Si from highly (001)-oriented PZT thick films via a CMOS-compatible sputtering/RTP process. Materialia 2019, 5: 100228.
Rüdiger A, Schneller T, Roelofs A, et al. Nanosize ferroelectric oxides - tracking down the superparaelectric limit. Appl Phys A 2005, 80: 1247-1255.
Wang K, Ouyang J, Wuttig M, et al. Superparaelectric (Ba0.95,Sr0.05)(Zr0.2,Ti0.8)O3 ultracapacitors. Adv Energy Mater 2020, 10: 2001778.
Yuan ML, Zhang W, Wang XY, et al. In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3 films on Si at 500 ℃. Appl Surf Sci 2013, 270: 319-323.
Lee JS, Joo SK. Analysis of grain-boundary effects on the electrical properties of Pb(Zr,Ti)O3 thin films. Appl Phys Lett 2002, 81: 2602-2604.
Voigt JA, Tuttle BA, Headley TJ, et al. The pyrochlore-to-perovskite transformation in solution-derived lead zirconate titanate thin films. MRS Proc 1994, 361: 395- 402.
Yan HX, Inam F, Viola G, et al. The contribution of electrical conductivity, dielectric permittivity and domain switching in ferroelectric hysteresis loops. J Adv Dielect 2011, 1: 107-118.
Brown E, Ma CR, Acharya J, et al. Controlling dielectric and relaxor-ferroelectric properties for energy storage by tuning Pb0.92La0.08Zr0.52Ti0.48O3 film thickness. ACS Appl Mater Interfaces 2014, 6: 22417-22422.
Liang ZS, Ma CR, Shen L, et al. Flexible lead-free oxide film capacitors with ultrahigh energy storage performances in extremely wide operating temperature. Nano Energy 2019, 57: 519-527.
Ren X. Large electric-field-induced strain in ferroelectric crystals by point-defect-mediated reversible domain switching. Nat Mater 2004, 3: 91-94.
Zhang W, Hu FR, Zhang H, et al. Investigation of the electrical properties of RF sputtered BaTiO3 films grown on various substrates. Mater Res Bull 2017, 95: 23-29.
Damjanovic D. Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics. Rep Prog Phys 1998, 61: 1267-1324.
Pan H, Zeng Y, Shen Y, et al. BiFeO3–SrTiO3 thin film as a new lead-free relaxor-ferroelectric capacitor with ultrahigh energy storage performance. J Mater Chem A 2017, 5: 5920-5926.
Journal of Advanced Ceramics
Pages 627-635
Cite this article:
YAN J, WANG Y, WANG C-M, et al. Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing. Journal of Advanced Ceramics, 2021, 10(3): 627-635.








Web of Science






Received: 28 September 2020
Revised: 09 January 2021
Accepted: 26 January 2021
Published: 05 March 2021
© The Author(s) 2021

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