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CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge–discharge cycles) and a good thermal stability (from –170 to 150 ℃) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.


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Boosting energy storage performance of low-temperature sputtered CaBi2Nb2O9 thin film capacitors via rapid thermal annealing

Show Author's information Jing YANa,b,cYanling WANGdChun-Ming WANGeJun OUYANGb( )
Key Laboratory for Liquid–Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan 250061, China
Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Shandong Provincial Key Laboratory of Molecular Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
College of Physics and Electronic Engineering, Qilu Normal University, Jinan 250013, China
Amperex Technology Limited, Ningde 352100, China
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Abstract

CaBi2Nb2O9 thin film capacitors were fabricated on SrRuO3-buffered Pt(111)/Ti/Si(100) substrates by adopting a two-step fabrication process. This process combines a low-temperature sputtering deposition with a rapid thermal annealing (RTA) to inhibit the grain growth, for the purposes of delaying the polarization saturation and reducing the ferroelectric hysteresis. By using this method, CaBi2Nb2O9 thin films with uniformly distributed nanograins were obtained, which display a large recyclable energy density Wrec ≈ 69 J/cm3 and a high energy efficiency η ≈ 82.4%. A superior fatigue-resistance (negligible energy performance degradation after 109 charge–discharge cycles) and a good thermal stability (from –170 to 150 ℃) have also been achieved. This two-step method can be used to prepare other bismuth layer-structured ferroelectric film capacitors with enhanced energy storage performances.

Keywords:

bismuth layer-structured ferroelectrics (BLSFs), calcium bismuth niobate (CaBi2Nb2O9), nanograin films, rapid thermal annealing (RTA), energy storage, fatigue-resistance
Received: 28 September 2020 Revised: 09 January 2021 Accepted: 26 January 2021 Published: 05 March 2021 Issue date: June 2021
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Publication history

Received: 28 September 2020
Revised: 09 January 2021
Accepted: 26 January 2021
Published: 05 March 2021
Issue date: June 2021

Copyright

© The Author(s) 2021

Acknowledgements

We acknowledge the financial support of the National Natural Science Foundation of China (Grant Nos. 51772175 and 51872166), and the Nano Projects of Suzhou City (Grant No. ZXG201445). J. Ouyang would also like to acknowledge the support from the Seed Funding for Top Talents in Qilu University of Technology (Shandong Academy of Sciences), the International Cooperation Research Project of Qilu University of Technology (Grant No. QLUTGJHZ2018003), and the Independent Innovation Foundation of Shandong University (Grant Nos. 2018JC045 and 2017ZD008).

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